Gas-induced perovskite formation
AssigneeOkinawa Institute of Science and Technology School Corporation
InventorsYabing Qi, Sonia Ruiz Raga
Life of this patent
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Abstract
A method of forming a perovskite film is provided, the method comprising inducing a chemical reaction between a metal halide compound and methylamine (CH3NH2) gas. Specifically, the method includes: forming a metal halide film on a substrate; and exposing the metal halide film to the methylamine (CH3NH2) gas for inducing the chemical reaction between the metal halide compound and the methylamine (CH3NH2) gas to form a perovskite film. Post treatments can be carried out by adding a step of exposing the perovskite film to hydriodic acid (HI) gas and methylamine (CH3NH2) gas sequentially or simultaneously.
Claims16
1-16. (canceled)
A method of forming a perovskite film, comprising:
- inducing a chemical reaction between a metal halide compound and methylamine (CH3NH2) gas.
A perovskite film fabricated by using a method comprising:
- forming a PbI2 film on a substrate;
- exposing the PbI2 film to methylamine (CH3NH2) gas for inducing a chemical reaction between PbI2 and methylamine (CH3NH2) gas to form a first perovskite film;
- and exposing the first perovskite film to hydriodic acid (HI) gas and methylamine (CH3NH2) gas sequentially for one or more cycles to form the perovskite film, the perovskite film comprising:
- a reduced amount of PbOx+yH2y compared to the first perovskite, based on a conversion of PbOx+yH2y included in the first perovskite film to PbI2, and sequentially a chemical reaction between PbI2 and the methylamine (CH3NH2) gas, wherein the perovskite film has a RMS surface roughness of about 14 nm and grain sizes of about 400 nm.
A perovskite film fabricated by using a method comprising:
- forming a PbI2 film on a substrate;
- exposing the PbI2 film to methylamine (CH3NH2) gas for inducing a chemical reaction between PbI2 and methylamine (CH3NH2) gas to form a first perovskite film;
- and exposing the first perovskite film to hydriodic acid (HI) gas and methylamine (CH3NH2) gas simultaneously to form the perovskite film, the perovskite film comprising:
- a reduced amount of PbOx+yH2y compared to the first perovskite, based on a conversion of PbOx+yH2y included in the first perovskite film to PbI2, and simultaneously a chemical reaction between PbI2 and the methylamine (CH3NH2) gas, wherein the perovskite film has a RMS surface roughness of about 6 nm and grain sizes of about 200 nm.
Dependencies are inferred from the claim text.