Methods of operating memory

A method of operating a memory, comprising:

• for each string of series-connected memory cells of a first plurality of strings of series-connected memory cells connected to a first data line, applying a respective potential of a first plurality of potentials to a respective control gate of a memory cell of that string of series-connected memory cells of the first plurality of strings of series-connected memory cells, and generating a first data value indicative of a level of a property sensed from the first data line while applying the respective potentials of the first plurality of potentials to the respective control gates of the memory cells of each string of series-connected memory cells of the first plurality of strings of series-connected memory cells;
• and
• for each string of series-connected memory cells of a second plurality of strings of series-connected memory cells connected to a second data line, applying a respective potential of a second plurality of potentials to a respective control gate of a memory cell of that string of series-connected memory cells of the second plurality of strings of series-connected memory cells, and generating a second data value indicative of a level of a property sensed from the second data line while applying the respective potentials of the second plurality of potentials to the respective control gates of the memory cells of each string of series-connected memory cells of the second plurality of strings of series-connected memory cells.

A method of operating a memory, comprising:

• for each string of series-connected memory cells of a first plurality of strings of series-connected memory cells connected to a first data line, applying a respective potential of a first plurality of potentials to a respective control gate of a memory cell of that string of series-connected memory cells of the first plurality of strings of series-connected memory cells, and generating a first data value indicative of a level of a property sensed from the first data line while applying the respective potentials of the first plurality of potentials to the respective control gates of the memory cells of each string of series-connected memory cells of the first plurality of strings of series-connected memory cells;
• for each string of series-connected memory cells of a second plurality of strings of series-connected memory cells connected to a second data line, applying a respective potential of a second plurality of potentials to a respective control gate of a memory cell of that string of series-connected memory cells of the second plurality of strings of series-connected memory cells, and generating a second data value indicative of a level of a property sensed from the second data line while applying the respective potentials of the second plurality of potentials to the respective control gates of the memory cells of each string of series-connected memory cells of the second plurality of strings of series-connected memory cells;
• performing a logical operation on a set of data values comprising the first data value and the second data value;
• for each string of series-connected memory cells of the first plurality of strings of series-connected memory cells, determining a respective potential of a third plurality of potentials to be applied to a respective control gate of a different memory cell of that string of series-connected memory cells of the first plurality of strings of series-connected memory cells in response to an output of the logical operation on the set of data values;
• and
• for each string of series-connected memory cells of the second plurality of strings of series-connected memory cells, determining a respective potential of a fourth plurality of potentials to be applied to a respective control gate of a different memory cell of that string of series-connected memory cells of the second plurality of strings of series-connected memory cells in response to the output of the logical operation on the set of data values.