Storage device and method of operating the same
AssigneeSK hynix Inc.
InventorJi Hyun Seo
Life of this patent
Estimating the term…
Abstract
Provided herein may be a storage device having disturb characteristics and a method of operating the storage device. The storage device may include one or more semiconductor memory devices, each including a plurality of memory cells, and a memory controller configured to set levels of pass voltages of the one or more semiconductor memory devices depending on program speeds of the plurality of memory cells.
Claims20
A semiconductor memory device comprising:
- a memory cell array including a plurality of memory blocks;
- a peripheral circuit configured to perform operations on the memory cell array;
- and
- a control logic configured to control the peripheral circuit based on setting information stored in a contents addressable memory (CAM) block, among the plurality of memory blocks, when the operations are performed,
- wherein the setting information comprises a level of a pass voltage applied to a plurality of memory cells included in the memory cell array, and
- wherein the level of the pass voltage is determined depending on program speeds of the plurality of memory cells.
A storage device, comprising:
- one or more semiconductor memory devices, each including a plurality of memory cells;
- and
- a memory controller configured to set levels of pass voltages of the one or more semiconductor memory devices depending on program speeds of the plurality of memory cells.
A method of operating a storage device, the storage device including a semiconductor memory device having a plurality of memory cells and a memory controller configured to control the semiconductor memory device, the method comprising:
- measuring program speeds of a part or all of the plurality of memory cells;
- and
- setting a level of a pass voltage of the semiconductor memory device depending on the measured program speeds.
Dependencies are inferred from the claim text.