Sense Amplifier Constructions
AssigneeMicron Technology, Inc.
InventorsCharles L. Ingalls, Scott J. Derner
Life of this patent
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Abstract
A sense amplifier construction comprises a first n-type transistor and a second n-type transistor above the first n-type transistor. A third p-type transistor is included and a fourth p-type transistor is above the third p-type transistor. A lower voltage activation line is electrically coupled to n-type source/drain regions that are elevationally between respective gates of the first and second n-type transistors. A higher voltage activation line is electrically coupled to p-type source/drain regions that are elevationally between respective gates of the third and fourth p-type transistors.
Claims6
A sense amplifier construction comprising:
- a first n-type transistor and a second n-type transistor above the first n-type transistor;
- a third p-type transistor and a fourth p-type transistor above the third p-type transistor;
- a lower voltage activation line electrically coupled to n-type source/drain regions that are elevationally between respective gates of the first and second n-type transistors;
- and
- a higher voltage activation line electrically coupled to p-type source/drain regions that are elevationally between respective gates of the third and fourth p-type transistors.
-22. (canceled)
Dependencies are inferred from the claim text.