Pattern inspection apparatus, pattern position measurement apparatus, aerial image measurement system, method for measuring aerial image,pattern position repairing apparatus, method for repairing pattern position, aerial image data processing apparatus, method for processing aerial image data, pattern exposure apparatus, method for exposing pattern, method for manufacturing mask, and mask manufacturing system

A pattern position measurement apparatus comprising:

• an optical image acquiring mechanism configured to acquire optical image data of a corresponding divided pattern for each of a plurality of masks on each of which the corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed, the each of the plurality of masks being aligned to the coordinate defined by alignment marks formed as a part of the corresponding divided pattern;
• a pattern position measurement processing circuitry configured to measure, as a pattern position, a position of a center of gravity of a pattern acquired from position information of an arbitral pattern edge designated in advance as a measuring condition, by using the optical image data of the corresponding divided pattern formed on each of the plurality of masks being aligned to the coordinate defined by the alignment marks acquired by the pattern image acquiring mechanism;
• a position deviation map generating processing circuitry configured to generate position deviation maps in each of which a position deviation at a center coordinate of each minimum element of a corresponding map of the position deviation maps is defined regarding the corresponding divided pattern formed on a corresponding mask of the plurality of masks, the position deviation at the center coordinate of the each minimum element being represented as a deviation from the coordinate defined by the alignment marks formed as the part of the corresponding divided pattern formed on the each of the plurality of masks, by using a position deviation amount of the corresponding divided pattern acquired by comparing a position of a pattern acquired from the optical image data of the corresponding divided pattern formed on each of the plurality of masks with a position of a pattern acquired from design pattern data of the corresponding divided pattern formed on each of the plurality of masks each aligned to the coordinate defined by the alignment marks;
• a difference position value map generating processing circuitry configured to generate one difference position value map defining a difference value between relative position deviation amounts of the each minimum element of the position deviation maps each aligned with the alignment marks as a reference acquired by comparing the optical image data and the design pattern data of the corresponding divided pattern, corresponding to the plurality of the masks each having the corresponding divided pattern formed thereon;
• a region specifying processing circuitry configured to specify at least one region having the difference value exceeding a threshold of distance between patterns laying side-by-side by using the difference position value map;
• and
• an output mechanism configured to output at least design coordinates of the objective patterns for pattern position measurement, position deviation of the measured pattern against the design position of the objective pattern, and information of a captured image of each region specified for the each region specified.

An aerial image measurement system comprising:

• a storage device configured to receive position deviation maps each acquired by comparing optical image data of corresponding divided pattern with design pattern data of the corresponding divided pattern for each of a plurality of masks on each of which the corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed, the plurality of masks each being aligned to the coordinate defined by alignment marks formed as a part of the corresponding divided pattern, and specific region information output by a pattern inspection apparatus or a pattern position measurement apparatus capable of outputting the specific region information of a specific region having a difference value between relative position deviation amounts of each minimum element of the position deviation maps acquired from the plurality of masks on each of which the corresponding divided pattern has been formed exceeding a threshold of distance between patterns laying side-by-side as input and store the position deviation maps and the specific region information;
• an image capturing mechanism configured to capture aerial images of the plurality of masks on each of which the corresponding divided pattern has been formed for the specific region specified based on the specific region information by using a plurality of illumination conditions and a plurality of focus conditions;
• an output mechanism configured to output the aerial images for the specific region of the plurality of masks on each of which the corresponding divided pattern has been formed;
• and
• a calculation processing circuitry configured to calculate edge position information defining an edge position of a wafer pattern acquired through lithographic processes with the corresponding divided pattern for each of the plurality of masks, based on the aerial images of the plurality of masks captured for the specific region,
• wherein the aerial image measurement system is connected to a control computer including an exposure determining processing circuitry configured to determine whether or not an inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on another one of the plurality of masks calculated for the specific region is in an allowed range in a case where the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated for the specific region by the calculation processing circuitry is composed to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference.

A method for measuring an aerial image, the method comprising:

• receiving specific region information output by a pattern inspection apparatus or a pattern position measurement apparatus capable of outputting the specific region information of a specific region having a difference value between relative position deviation amounts of each minimum element of position deviation maps each acquired by comparing optical image data of a corresponding divided pattern with design pattern data of the corresponding divided pattern for each of a plurality of masks on each of which the corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed, the plurality of masks each being aligned to the coordinate defined by alignment marks formed as a part of the corresponding divided pattern, exceeding a threshold of distance between patterns laying side-by-side as input;
• capturing aerial images of the plurality of masks on each of which the corresponding divided pattern has been formed for the specific region specified based on the specific region information by using a plurality of illumination conditions and a plurality of focus conditions;
• calculating edge position information defining an edge position of a wafer pattern acquired through lithographic processes with the corresponding divided pattern for each of the plurality of masks, based on measured aerial images of the plurality of masks, on each of which the corresponding divided pattern has been formed, captured for the specific region;
• and
• outputting the edge position information of the wafer pattern used for determining whether or not an inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on another one of the plurality of masks calculated for the specific region is in an allowed range in a case where the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated for the specific region is composed to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference.

A pattern position repairing apparatus comprising:

• an aerial image measurement system including:
• an output mechanism configured to output specific region information output by a pattern inspection apparatus or a pattern position measurement apparatus capable of outputting the specific region information of a specific region having a difference value between relative position deviation amounts of each minimum element of position deviation maps each acquired by comparing optical image data of a corresponding divided pattern and design pattern data of the corresponding divided pattern for each of a plurality of masks on each of which the corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed, the plurality of masks each being aligned to the coordinate defined by alignment marks formed as a part of the corresponding divided pattern, exceeding a threshold of distance between patterns laying side-by-side and aerial images of the plurality of masks, on each of which the corresponding divided pattern has been formed, captured for the specific region specified based on the specific region information by using a plurality of illumination conditions and a plurality of focus conditions;
• and
• a calculation processing circuitry configured to calculate edge position information defining an edge position of a wafer pattern acquired through lithographic processes with the corresponding divided pattern for each of the plurality of masks, based on the aerial images of the plurality of masks captured for the specific region of each of the divided patterns;
• a control computer including:
• an inter-pattern distance determination processing circuitry used for determining whether or not an inter-pattern distance between the edge position of one of a plurality of wafer patterns and the edge position of another one of the plurality of wafer patterns in the specific region is in an allowed range in a case where the edge position of the one of the plurality of wafer patterns and the edge position of the another one of the plurality of wafer patterns in the specific region calculated by the calculation processing circuitry is composed so as to be overlaid by using the alignment marks of one of the plurality of masks and the alignment marks of another one of the plurality of masks as a reference;
• a repairing mechanism configured to repair center positions of the defected patterns in the specific region, the defected patterns being a part of the corresponding divided pattern to be arranged in the specific region and being formed on each of the plurality of masks, by repairing the edge position of the corresponding divided pattern formed on at least one mask of the plurality of masks by repairing a shape of the corresponding divided pattern formed on the at least one mask on which the defected patterns are formed using a charged particle beam, the at least one mask of the plurality of masks being selected by the control computer including the inter-pattern distance determination processing circuitry, for the specific region having the inter-pattern distance between the edge position of the one of the plurality of wafer patterns and the edge position of the another one of the plurality of wafer patterns in the specific region determined to be out of the allowed range by the inter-pattern distance determination processing circuitry;
• and
• an output mechanism configured to acquire and output a secondary electron image generated due to a charged particle beam for the defected patterns repaired after repairing a shape of the corresponding divided pattern formed on the at least one mask.

A method for repairing a pattern position, the method comprising using a pattern position repairing apparatus including a repairing mechanism capable of repairing center positions of the defected patterns in a specific region, the defected patterns being a part of a corresponding divided pattern to be arranged in the specific region and being formed on each of a plurality of masks, by repairing edge position of the corresponding divided pattern formed on at least one mask of the plurality of masks by repairing a shape of the corresponding divided pattern formed on the at least one mask on which the defected patterns are formed using a charged particle beam, for the specific region being determined to be out of an allowed range by a control computer capable of determining whether or not an inter-pattern distance between an edge position of one of a plurality of wafer patterns and the edge position of another one of the plurality of wafer patterns in the specific region is in the allowed range in a case where the edge position of the one of the plurality of wafer patterns and the edge position of the another one of the plurality of wafer patterns in the specific region is composed so as to be overlaid by using alignment mark of one of the plurality of masks and the alignment marks of another one of the plurality of masks as a reference based on:

• specific region information output by a pattern inspection apparatus or a pattern position measurement apparatus capable of outputting the specific region information of a specific region having a difference value between relative position deviation amounts of each minimum element of position deviation maps each acquired by comparing optical image data of a corresponding divided pattern and design pattern data of the corresponding divided pattern for each of the plurality of masks on each of which the corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed, the plurality of masks each being aligned to the coordinate defined by the alignment marks formed as a part of the corresponding divided pattern, exceeding a threshold of distance between patterns laying side-by-side;
• aerial images captured for the specific region specified output by an aerial image measurement system capable of outputting
• the aerial images of the plurality of masks, on each of which the corresponding divided pattern has been formed, captured for the specific region specified based on the specific region information by using a plurality of illumination conditions and a plurality of focus conditions and
• edge position information defining an edge position of a wafer pattern acquired through lithographic processes with the corresponding divided pattern for each of the plurality of masks, based on the aerial images of the plurality of masks captured for the specific region of each of the divided patterns;
• and
• the edge position information of each wafer pattern in the divided patterns formed on the plurality of masks, output by the aerial image measurement system.

An aerial image data processing apparatus comprising:

• a storage device configured to receive and store
• specific region information output by a pattern inspection apparatus or a pattern position measurement apparatus capable of outputting the specific region information of a specific region having a difference value between relative position deviation amounts of each minimum element of position deviation maps each acquired by comparing optical image data of a corresponding divided pattern and design pattern data of the corresponding divided pattern for each of a plurality of masks on each of which the corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed, the plurality of masks each being aligned to the coordinate defined by alignment marks formed as a part of the corresponding divided pattern, exceeding a threshold of distance between patterns laying side-by-side,
• aerial images of the plurality of masks captured for the specific region specified based on the specific region information by using a plurality of illumination conditions and a plurality of focus conditions, and
• edge position information defining an edge position of a wafer pattern acquired through lithographic processes with the corresponding divided pattern for each of the plurality of masks, calculated based on the aerial images of the plurality of masks captured for the specific region of each of the divided patterns;
• an inter-pattern distance determination processing circuitry configured to determine whether or not an inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on another one of the plurality of masks calculated in the specific region is in an allowed range in a case where the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated in the specific region is composed so as to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference;
• and
• an output mechanism configured to output information of each combination of an illumination condition and a focus condition for the divided patterns formed on the plurality of masks so that the inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks is determined to be within the allowed range by the inter-pattern distance determination processing circuitry.

A method for processing aerial image data, the method comprising:

• receiving specific region information output by a pattern inspection apparatus or a pattern position measurement apparatus capable of outputting the specific region information of a specific region having a difference value between relative position deviation amounts of each minimum element of position deviation maps each acquired by comparing optical image data of a corresponding divided pattern and design pattern data of the corresponding divided pattern for each of a plurality of masks on each of which the corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed, the plurality of masks each being aligned to the coordinate defined by alignment marks formed as a part of the corresponding divided pattern, exceeding a threshold of distance between patterns laying side-by-side;
• capturing aerial images for the specific region specified based on the specific region information by using a plurality of illumination conditions and a plurality of focus conditions;
• calculating edge position information defining an edge position of a wafer pattern acquired through lithographic processes with the corresponding divided pattern for each of the plurality of masks, based on the aerial images of the plurality of masks captured for the specific region of each of the divided patterns;
• determining whether or not an inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on another one of the plurality of masks calculated in the specific region is in an allowed range in a case where the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated in the specific region is composed so as to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference;
• and
• outputting information of each combination of an illumination condition and a focus condition for the divided patterns formed on the plurality of masks so that the inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks is determined to be within the allowed range.

A method for manufacturing a mask on which a corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning is formed, the method comprising:

• receiving specific region information output by a pattern inspection apparatus or a pattern position measurement apparatus capable of outputting the specific region information of a specific region having a difference value between relative position deviation amounts of each minimum element of position deviation maps each acquired by comparing optical image data of a corresponding divided pattern with design pattern data of the corresponding divided pattern for each of a plurality of masks on each of which the corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed, the plurality of masks each being aligned to the coordinate defined by alignment marks formed as a part of the corresponding divided pattern, exceeding a threshold of distance between patterns laying side-by-side as input;
• capturing aerial images of the plurality of masks on each of which the corresponding divided pattern has been formed for the specific region specified based on the specific region information by using a plurality of illumination conditions and a plurality of focus conditions;
• calculating edge position information defining an edge position of a wafer pattern acquired through lithographic processes with the corresponding divided pattern for each of the plurality of masks, based on aerial images of the plurality of masks, on each of which the corresponding divided pattern has been formed, captured for the specific region;
• determining whether or not an inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on another one of the plurality of masks calculated for the specific region is in an allowed range in a case where the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated for the specific region is composed to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference;
• and
• outputting information of each combination of an illumination condition and a focus condition for the divided patterns formed on the plurality of masks so that the inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks is determined to be within the allowed range.

A mask manufacturing system comprising:

• a pattern inspection apparatus including:
• an optical image acquiring mechanism configured to acquire optical image data of a corresponding divided pattern for each of a plurality of masks on each of which the corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed, the each of the plurality of masks being aligned to the coordinate defined by alignment marks formed as a part of the corresponding divided pattern;
• a position deviation map generating processing circuitry configured to generate position deviation maps in each of which a position deviation at a center coordinate of each minimum element of a corresponding map of the position deviation maps is defined regarding the corresponding divided pattern formed on a corresponding mask of the plurality of masks, the position deviation at the center coordinate of the each minimum element being represented as a deviation from the coordinate defined by the alignment marks formed as the part of the corresponding divided pattern formed on the each of the plurality of masks, by using a position deviation amount of the corresponding divided pattern acquired by comparing the optical image data of the corresponding divided pattern formed on each of the plurality of masks with design pattern data of the corresponding divided pattern formed on each of the plurality of masks each aligned to the coordinate defined by the alignment marks;
• a difference position value map generating processing circuitry configured to generate one difference position value map defining a difference value between relative position deviation amounts of the each minimum element of the position deviation maps each aligned with the alignment marks as a reference acquired by comparing the optical image data and the design pattern data of the corresponding divided pattern, corresponding to the plurality of the masks each having the corresponding divided pattern formed thereon;
• a region specifying processing circuitry configured to specify at least one specific region having the difference value exceeding a threshold of distance between patterns laying side-by-side by using the difference position value map;
• and
• an output mechanism configured to output specific region information of at least coordinates, a type of defect, and information of a reference image of each specific region specified for the each specific region specified;
• an aerial image measurement system including:
• a storage device configured to receive the specific region information output from the pattern inspection apparatus as input and store the specific region information;
• an image capturing mechanism configured to capture aerial images of the plurality of masks on each of which the corresponding divided pattern has been formed for the specific region specified based on the specific region information by using a plurality of illumination conditions and a plurality of focus conditions;
• an output mechanism configured to output the aerial images for the specific region of the plurality of masks on each of which the corresponding divided pattern has been formed;
• and
• a calculation processing circuitry configured to calculate edge position information defining an edge position of a wafer pattern acquired through lithographic processes with the corresponding divided pattern for each of the plurality of masks, based on the aerial images of the plurality of masks captured for the specific region,
• wherein the aerial image measurement system is connected to a control computer including an exposure determining processing circuitry configured to determine whether or not an inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on another one of the plurality of masks calculated for the specific region is in an allowed range in a case where the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated for the specific region by the calculation processing circuitry is composed to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference;
• a data managing apparatus including:
• a data recording device capable of storing information output from the pattern inspection apparatus and the aerial image measurement system for the plurality of masks;
• and
• a pattern position repairing apparatus including:
• a storage device configured to receive and store information of the divided patterns acquired by dividing the pattern into the plurality of parts for the multiple patterning and formed on the plurality of masks, selected arbitrary by the data managing apparatus and the edge position information defining the edge position of the wafer pattern acquired through lithographic processes with the corresponding divided pattern for the each of the plurality of masks, based on the aerial images of the plurality of masks captured for the specific region by the aerial image measurement system;
• an inter-pattern distance determination processing circuitry configured to select data of the divided patterns formed on the plurality of masks and determine a repairability of a pattern shape for at least one mask among the plurality of masks on each of which the corresponding divided pattern of the divided patterns has been formed, based on the edge position information of the wafer pattern calculated in the plurality of illumination conditions and the plurality of focus conditions in a case where an inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks is determined to be out of the allowed range in the plurality of illumination conditions and the plurality of focus conditions, the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated for the specific region being composed to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference;
• a repairing mechanism configured to repair some edge positions of the defected patterns in the specific region, the defected patterns being a part of the corresponding divided pattern to be arranged in the specific region and being formed on each of the plurality of masks, by repairing a shape of the corresponding divided pattern formed on the at least one mask by using a charged particle beam for the at least one mask determined to be repairable based on information of the each of the defected patterns formed on the plurality of masks and configuring the specific region, and the edge position information defining the edge position of the wafer pattern for each of the plurality of masks, calculated based on the aerial images;
• and
• an output mechanism configured to acquire a secondary electron image generated due to a charged particle beam for the defected patterns repaired and output the secondary electron image after the repairing,
• wherein the data recording device can further store output data of the pattern position repairing apparatus.

A method for manufacturing a mask, the method comprising:

• acquiring optical image data of a corresponding divided pattern for each of a plurality of masks on each of which the corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed, the each of the plurality of masks being aligned to the coordinate defined by alignment marks formed as a part of the corresponding divided pattern by using a pattern inspection apparatus;
• generating position deviation maps in each of which a position deviation at a center coordinate of each minimum element of a corresponding map of the position deviation maps is defined regarding the corresponding divided pattern formed on a corresponding mask of the plurality of masks, the position deviation at the center coordinate of the each minimum element being represented as a deviation from the coordinate defined by the alignment marks formed as the part of the corresponding divided pattern formed on the each of the plurality of masks, by using a position deviation amount of the corresponding divided pattern acquired by comparing the optical image data of the corresponding divided pattern formed on each of the plurality of masks with design pattern data of the corresponding divided pattern formed on each of the plurality of masks each aligned to the coordinate defined by the alignment marks by using the pattern inspection apparatus;
• generating a difference position value map defining a difference value between relative position deviation amounts of the each minimum element of the position deviation maps each aligned with the alignment marks as a reference acquired by comparing the optical image data and the design pattern data of the corresponding divided pattern, corresponding to the plurality of the masks each having the corresponding divided pattern formed thereon by using the pattern inspection apparatus;
• specifying at least one specific region having the difference value exceeding a threshold of distance between patterns laying side-by-side using the difference position value map by using the pattern inspection apparatus;
• outputting specific region information of at least coordinates, a type of defect, and information of a reference image of each specific region specified for the each specific region by using the pattern inspection apparatus;
• storing the specific region information of the specific region output from the pattern inspection apparatus for the plurality of masks on each of which the corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed by using an aerial image measurement system;
• capturing aerial images of the plurality of masks for the specific region specified based on the specific region information by using a plurality of illumination conditions and a plurality of focus conditions by using the aerial image measurement system;
• calculating edge position information defining an edge position of a wafer pattern acquired through lithographic processes with the corresponding divided pattern for each of the plurality of masks, based on the aerial images of the plurality of masks captured for the specific region by using the aerial image measurement system;
• determining whether or not an inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on another one of the plurality of masks calculated for the specific region is in an allowed range in a case where the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated for the specific region is composed to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference by using the aerial image measurement system, and
• repairing some edge positions of the defected patterns in the specific region, the defected patterns being a part of the corresponding divided pattern to be arranged in the specific region and being formed on each of the plurality of masks, by repairing a shape of the corresponding divided pattern formed on the at least one mask by using a charged particle beam for the at least one mask determined to be repairable based on information of the each of the defected patterns formed on the plurality of masks and configuring the specific region, and the edge position information defining the edge position of the wafer pattern for each of the plurality of masks, calculated based on the aerial images by using a pattern position repairing apparatus.

A method for manufacturing a mask, the method comprising:

• acquiring optical image data of a corresponding divided pattern for each of a plurality of masks on each of which the corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed, the each of the plurality of masks being aligned to the coordinate defined by alignment marks formed as a part of the corresponding divided pattern by using a pattern position measurement apparatus and measuring, as a pattern position, a position of a center of gravity of a pattern acquired from position information of an arbitral pattern edge designated in advance as a measuring condition, in the optical image data of the corresponding divided pattern acquired by using the pattern position measurement apparatus;
• generating position deviation maps in each of which a position deviation at a center coordinate of each minimum element of a corresponding map of the position deviation maps is defined regarding the corresponding divided pattern formed on a corresponding mask of the plurality of masks, the position deviation at the center coordinate of the each minimum element being represented as a deviation from the coordinate defined by the alignment marks formed as the part of the corresponding divided pattern formed on the each of the plurality of masks, by using a position deviation amount of the corresponding divided pattern acquired by comparing a position of the arbitral pattern included in the optical image data of the corresponding divided pattern formed on each of the plurality of masks with a position of a pattern acquired from design pattern data of the corresponding divided pattern formed on each of the plurality of masks each aligned to the coordinate defined by the alignment marks by using the pattern position measurement apparatus;
• generating a difference position value map defining a difference value between relative position deviation amounts of the each minimum element of the position deviation maps each aligned with the alignment marks as a reference acquired by comparing the optical image data and the design pattern data of the corresponding divided pattern, corresponding to the plurality of the masks each having the corresponding divided pattern formed thereon by using the pattern position measurement apparatus;
• specifying at least one specific region having the difference value exceeding a threshold of distance between patterns laying side-by-side using the difference position value map by using the pattern position measurement apparatus;
• outputting specific region information of at least design coordinates of the object patterns for pattern position measurement, position deviation of the measured pattern against the design position of the objective pattern, and information of a captured image of each specific region specified for the each specific region by using the pattern position measurement apparatus;
• storing the specific region information of the specific region output from the pattern position measurement apparatus for the plurality of masks on each of which the corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed by using an aerial image measurement system;
• capturing aerial images of the plurality of masks for the specific region specified based on the specific region information by using a plurality of illumination conditions and a plurality of focus conditions by using the aerial image measurement system;
• calculating edge position information defining an edge position of a wafer pattern acquired through lithographic processes with the corresponding divided pattern for each of the plurality of masks, based on the aerial images of the plurality of masks captured for the specific region by using the aerial image measurement system;
• determining whether or not an inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on another one of the plurality of masks calculated for the specific region is in an allowed range in a case where the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated for the specific region is composed to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference by using the aerial image measurement system, and
• repairing some edge positions of the defected patterns in the specific region, the defected patterns being a part of the corresponding divided pattern to be arranged in the specific region and being formed on each of the plurality of masks, by repairing a shape of the corresponding divided pattern formed on the at least one mask by using a charged particle beam for the at least one mask determined to be repairable based on information of the each of the defected patterns formed on the plurality of masks and configuring the specific region, and the edge position information defining the edge position of the wafer pattern for each of the plurality of masks, calculated based on the aerial images by using a pattern position repairing apparatus.

A method for manufacturing a mask on which a corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning is formed, the method comprising:

• a step for capturing aerial images of a specific region common to a plurality of masks on each of which a corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed, by using a plurality of illumination conditions and a plurality of focus conditions by using an aerial image measurement system;
• a step for calculating edge position information defining an edge position of a wafer pattern acquired through lithographic processes with the corresponding divided pattern for each of the plurality of masks, based on the aerial images of the plurality of masks captured for the specific region by using the aerial image measurement system;
• a step for determining whether or not an inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on another one of the plurality of masks calculated for the specific region is in an allowed range in a case where the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated for the specific region is composed to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference;
• and
• a step for repairing a shape of a defected pattern in the specific region of the corresponding divided pattern formed on at least one mask among the plurality of masks on each of which the corresponding divided pattern of divided patterns has been formed, using a charged particle beam in a case where the inter-pattern distance is determined to be out of the allowed range, in the step for determining whether or not the inter-pattern distance is in the allowed range by using a pattern position repairing apparatus,
• wherein each step is repeated at least two or more times.

A pattern exposure apparatus comprising:

• a storage device configured to receive and store:
• output data from a pattern inspection apparatus including:
• an optical image acquiring mechanism configured to acquire optical image data of a corresponding divided pattern for each of a plurality of masks on each of which the corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed, the each of the plurality of masks being aligned to the coordinate defined by alignment marks formed as a part of the corresponding divided pattern;
• a position deviation map generating processing circuitry configured to generate position deviation maps in each of which a position deviation at a center coordinate of each minimum element of a corresponding map of the position deviation maps is defined regarding the corresponding divided pattern formed on a corresponding mask of the plurality of masks, the position deviation at the center coordinate of the each minimum element being represented as a deviation from the coordinate defined by the alignment marks formed as the part of the corresponding divided pattern formed on the each of the plurality of masks, by using a position deviation amount of the corresponding divided pattern acquired by comparing the optical image data of the corresponding divided pattern formed on each of the plurality of masks with design pattern data of the corresponding divided pattern formed on each of the plurality of masks each aligned to the coordinate defined by the alignment marks;
• a difference position value map generating processing circuitry configured to generate one difference position value map defining a difference value between relative position deviation amounts of the each minimum element of the position deviation maps each aligned with the alignment marks as a reference acquired by comparing the optical image data and the design pattern data of the corresponding divided pattern, corresponding to the plurality of the masks each having the corresponding divided pattern formed thereon;
• a region specifying processing circuitry configured to specify at least one specific region having the difference value exceeding a threshold of distance between patterns laying side-by-side by using the difference position value map;
• and
• an output mechanism configured to output specific region information of at least coordinates, a type of defect, and information of a reference image of each specific region specified for the each specific region specified;
• output data from an aerial image measurement system including:
• a storage device configured to receive the specific region information output from the pattern inspection apparatus as input and store the specific region information;
• an image capturing mechanism configured to capture aerial images of the plurality of masks on each of which the corresponding divided pattern has been formed for the specific region specified based on the specific region information by using a plurality of illumination conditions and a plurality of focus conditions;
• an output mechanism configured to output the aerial images for the specific region of the plurality of masks on each of which the corresponding divided pattern has been formed;
• and
• a calculation processing circuitry configured to calculate edge position information defining an edge position of a wafer pattern acquired through lithographic processes with the corresponding divided pattern for each of the plurality of masks, based on the aerial images of the plurality of masks captured for the specific region,
• wherein the aerial image measurement system is connected to a control computer including an exposure determining processing circuitry configured to determine whether or not an inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on another one of the plurality of masks calculated for the specific region is in an allowed range in a case where the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated for the specific region by the calculation processing circuitry is composed to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference;
• output data from a data managing apparatus including:
• a data recording device capable of storing information output from the pattern inspection apparatus and the aerial image measurement system for the plurality of masks;
• output data from a pattern position repairing apparatus including:
• an inter-pattern distance determination processing circuitry configured to receive information of the divided patterns acquired by dividing the pattern into the plurality of parts for the multiple patterning and formed on the plurality of masks, selected arbitrary by the data managing apparatus and the edge position information defining the edge position of the wafer pattern acquired through lithographic processes with the corresponding divided pattern for the each of the plurality of masks, based on the aerial images of the plurality of masks captured for the specific region by the aerial image measurement system, select data of the divided patterns formed on the plurality of masks, and determine a repairability of a pattern shape for at least one mask among the plurality of masks on each of which the corresponding divided pattern of the divided patterns has been formed, based on the edge position information of the wafer pattern calculated in the plurality of illumination conditions and the plurality of focus conditions in a case where an inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks is determined to be out of the allowed range in the plurality of illumination conditions and the plurality of focus conditions, the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated for the specific region being composed to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference;
• a repairing mechanism configured to repair some edge positions of the defected patterns in the specific region, the defected patterns being a part of the corresponding divided pattern to be arranged in the specific region and being formed on each of the plurality of masks, by repairing a shape of the corresponding divided pattern formed on the at least one mask by using a charged particle beam for the at least one mask determined to be repairable based on information of the each of the defected patterns formed on the plurality of masks and configuring the specific region, and the edge position information defining the edge position of the wafer pattern for each of the plurality of masks, calculated based on the aerial images;
• and
• an output mechanism configured to acquire a secondary electron image generated due to a charged particle beam for the defected patterns repaired and output the secondary electron image after the repairing;
• and
• information of each combination of an illumination condition and a focus condition for the divided patterns formed on the plurality of masks so that the inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks is determined to be within the allowed range in a case where the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated based on the aerial images of the plurality of masks captured for the specific region of each of the divided patterns using a plurality of illumination conditions and a plurality of focus conditions is composed so as to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference;
• and
• an exposure mechanism configured to execute exposure in a state that a plurality of illumination conditions or a plurality of focus conditions being applicable to the divided patterns formed on the plurality of masks being limited based on any one of the output data from the pattern inspection apparatus, the output data from the aerial image measurement system, the output data from the data managing apparatus, and the output data from the pattern position repairing apparatus in a case that the pattern is printed to a wafer by using a multiple-patterning technique by using the plurality of masks.

A pattern exposure apparatus comprising:

• a storage device configured to receive and store:
• output data from a pattern position measurement apparatus including:
• an optical image acquiring mechanism configured to acquire optical image data of a corresponding divided pattern for each of a plurality of masks on each of which the corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed, the each of the plurality of masks being aligned to the coordinate defined by alignment marks formed as a part of the corresponding divided pattern;
• a pattern position measurement processing circuitry configured to measure, as a pattern position, a position of a center of gravity of a pattern acquired from position information of an arbitral pattern edge designated in advance as a measuring condition, by using the optical image data of the corresponding divided pattern formed on each of the plurality of masks being aligned to the coordinate defined by the alignment marks acquired by the pattern image acquiring mechanism;
• a position deviation map generating processing circuitry configured to generate position deviation maps in each of which a position deviation at a center coordinate of each minimum element of a corresponding map of the position deviation maps is defined regarding the corresponding divided pattern formed on a corresponding mask of the plurality of masks, the position deviation at the center coordinate of the each minimum element being represented as a deviation from the coordinate defined by the alignment marks formed as the part of the corresponding divided pattern formed on the each of the plurality of masks, by using a position deviation amount of the corresponding divided pattern acquired by comparing a position of a pattern acquired from the optical image data of the corresponding divided pattern formed on each of the plurality of masks with a position of a pattern acquired from design pattern data of the corresponding divided pattern formed on each of the plurality of masks each aligned to the coordinate defined by the alignment marks;
• a difference position value map generating processing circuitry configured to generate one difference position value map defining a difference value between relative position deviation amounts of the each minimum element of the position deviation maps each aligned with the alignment marks as a reference acquired by comparing the optical image data and the design pattern data of the corresponding divided pattern, corresponding to the plurality of the masks each having the corresponding divided pattern formed thereon;
• a region specifying processing circuitry configured to specify at least one specific region having the difference value exceeding a threshold of distance between patterns laying side-by-side by using the difference position value map;
• and
• an output mechanism configured to output specific region information of at least design coordinates of the objective patterns for pattern position measurement, position deviation of the measured pattern against the design position of the objective pattern, and information of a captured image of each specific region specified for the each specific region specified;
• output data from an aerial image measurement system including:
• a storage device configured to receive the specific region information output from the pattern position measurement apparatus as input and store the specific region information;
• an image capturing mechanism configured to capture aerial images of the plurality of masks on each of which the corresponding divided pattern has been formed for the specific region specified based on the specific region information by using a plurality of illumination conditions and a plurality of focus conditions;
• an output mechanism configured to output the aerial images for the specific region of the plurality of masks on each of which the corresponding divided pattern has been formed;
• and
• a calculation processing circuitry configured to calculate edge position information defining an edge position of a wafer pattern acquired through lithographic processes with the corresponding divided pattern for each of the plurality of masks, based on the aerial images of the plurality of masks captured for the specific region,
• wherein the aerial image measurement system is connected to a control computer including an exposure determining processing circuitry configured to determine whether or not an inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on another one of the plurality of masks calculated for the specific region is in an allowed range in a case where the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated for the specific region by the calculation processing circuitry is composed to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference;
• output data from a data managing apparatus including:
• a data recording device capable of storing information output from the pattern position measurement apparatus and the aerial image measurement system for the plurality of masks;
• output data from a pattern position repairing apparatus including:
• an inter-pattern distance determination processing circuitry configured to receive information of the divided patterns acquired by dividing the pattern into the plurality of parts for the multiple patterning and formed on the plurality of masks, selected arbitrary by the data managing apparatus and the edge position information defining the edge position of the wafer pattern acquired through lithographic processes with the corresponding divided pattern for the each of the plurality of masks, based on the aerial images of the plurality of masks captured for the specific region by the aerial image measurement system, select data of the divided patterns formed on the plurality of masks, and determine a repairability of a pattern shape for at least one mask among the plurality of masks on each of which the corresponding divided pattern of the divided patterns has been formed, based on the edge position information of the wafer pattern calculated in the plurality of illumination conditions and the plurality of focus conditions in a case where an inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks is determined to be out of the allowed range in the plurality of illumination conditions and the plurality of focus conditions, the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated for the specific region being composed to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference;
• a repairing mechanism configured to repair some edge positions of the defected patterns in the specific region, the defected patterns being a part of the corresponding divided pattern to be arranged in the specific region and being formed on each of the plurality of masks, by repairing a shape of the corresponding divided pattern formed on the at least one mask by using a charged particle beam for the at least one mask determined to be repairable based on information of the each of the defected patterns formed on the plurality of masks and configuring the specific region, and the edge position information defining the edge position of the wafer pattern for each of the plurality of masks, calculated based on the aerial images;
• and
• an output mechanism configured to acquire a secondary electron image generated due to a charged particle beam for the defected patterns repaired and output the secondary electron image after the repairing;
• and
• information of each combination of an illumination condition and a focus condition for the divided patterns formed on the plurality of masks so that the inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks is determined to be within the allowed range in a case where the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated based on the aerial images of the plurality of masks captured for the specific region of each of the divided patterns using a plurality of illumination conditions and a plurality of focus conditions is composed so as to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference;
• and
• an exposure mechanism configured to execute exposure in a state that a plurality of illumination conditions or a plurality of focus conditions being applicable to the divided patterns formed on the plurality of masks being limited based on any one of the output data from the pattern position measurement apparatus, the output data from the aerial image measurement system, the output data from the data managing apparatus, and the output data from the pattern position repairing apparatus in a case that the pattern is printed to a wafer by using a multiple-patterning technique by using the plurality of masks.

A method for exposing a pattern, the method comprising:

• a step for acquiring optical image data of a corresponding divided pattern for each of a plurality of masks on each of which the corresponding divided pattern of divided patterns acquired by dividing a pattern into a plurality of parts for multiple patterning has been formed, the each of the plurality of masks being aligned to the coordinate defined by alignment marks formed as a part of the corresponding divided pattern by using a pattern inspection apparatus;
• a step for generating position deviation maps in each of which a position deviation at a center coordinate of each minimum element of a corresponding map of the position deviation maps is defined regarding the corresponding divided pattern formed on a corresponding mask of the plurality of masks, the position deviation at the center coordinate of the each minimum element being represented as a deviation from the coordinate defined by the alignment marks formed as the part of the corresponding divided pattern formed on the each of the plurality of masks, by using a position deviation amount of the corresponding divided pattern acquired by comparing the optical image data of the corresponding divided pattern formed on each of the plurality of masks with design pattern data of the corresponding divided pattern formed on each of the plurality of masks each aligned to the coordinate defined by the alignment marks by using the pattern inspection apparatus;
• a step for generating a difference position value map defining a difference value between relative position deviation amounts of the each minimum element of the position deviation maps each aligned with the alignment marks as a reference acquired by comparing the optical image data and the design pattern data of the corresponding divided pattern, corresponding to the plurality of the masks each having the corresponding divided pattern formed thereon by using the pattern inspection apparatus;
• a step for specifying at least one specific region having the difference value exceeding a threshold of distance between patterns laying side-by-side using the difference position value map by using the pattern inspection apparatus;
• a step for outputting specific region information of at least coordinates, a type of defect, and information of a reference image of each specific region specified for the each specific region by using the pattern inspection apparatus;
• a step for receiving and storing the specific region information output from the pattern inspection apparatus by using an aerial image measurement system;
• a step for capturing aerial images of the plurality of masks for the specific region specified based on the specific region information by using a plurality of illumination conditions and a plurality of focus conditions by using the aerial image measurement system;
• a step for outputting the aerial images for the specific region of the plurality of masks on each of which the corresponding divided pattern of divided patterns has been formed;
• and
• a step for calculating edge position information defining an edge position of a wafer pattern acquired through lithographic processes with the corresponding divided pattern for each of the plurality of masks, based on the aerial images of the plurality of masks captured for the specific region by using the aerial image measurement system;
• a step for determining whether or not an inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on another one of the plurality of masks calculated for the specific region is in an allowed range in a case where the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated for the specific region is composed to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference by using the aerial image measurement system;
• a step for storing information output from the pattern inspection apparatus and the aerial image measurement system for the plurality of masks by using a data managing apparatus;
• a step for inputting information of the divided patterns formed on the plurality of masks, divided for multiple patterning, and stored in a data recording device arbitrary selected by the data managing apparatus and edge position information defining the edge position of the wafer pattern for each of the plurality of masks, calculated based on the aerial images of the plurality of masks captured by using the aerial image measurement system to a storage device;
• a step for selecting data of the divided patterns formed on the plurality of masks and determining a repairability of a pattern shape for at least one mask among the plurality of masks on each of which the corresponding divided pattern of the divided patterns has been formed, based on the edge position information of the wafer pattern calculated in the plurality of illumination conditions and the plurality of focus conditions in a case where an inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks is determined to be out of the allowed range in the plurality of illumination conditions and the plurality of focus conditions, the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated for the specific region being composed to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference by using the data managing apparatus;
• a step for repairing some edge positions of the defected patterns in the specific region, the defected patterns being a part of the corresponding divided pattern to be arranged in the specific region and being formed on each of the plurality of masks, by repairing a shape of the corresponding divided pattern formed on the at least one mask by using a charged particle beam for the at least one mask determined to be repairable based on information of the each of the defected patterns formed on the plurality of masks and configuring the specific region, and the edge position information defining the edge position of the wafer pattern for each of the plurality of masks, calculated based on the aerial images by using the pattern position repairing apparatus;
• a step for acquiring a secondary electron image generated due to a charged particle beam for the defected patterns repaired and output the secondary electron image after the repairing;
• a step for inputting information of each combination of an illumination condition and a focus condition for the divided patterns formed on the plurality of masks so that the inter-pattern distance between the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks is determined to be within the allowed range in a case where the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the one of the plurality of masks and the edge position of the wafer pattern of the corresponding divided pattern which has been formed on the another one of the plurality of masks calculated based on the aerial images of the plurality of masks captured for the specific region of each of the divided patterns using a plurality of illumination conditions and a plurality of focus conditions is composed so as to be overlaid by using the alignment marks of the one of the plurality of masks and the alignment marks of the another one of the plurality of masks as a reference by using the data managing apparatus;
• and
• a step for executing, by using an exposure apparatus, exposure in a state that a plurality of illumination conditions or a plurality of focus conditions being applicable to the divided patterns formed on the plurality of masks being limited based on any one of the output data from the pattern inspection apparatus, the output data from the aerial image measurement system, the output data from the data managing apparatus, and the output data from the pattern position repairing apparatus in a case that the pattern is printed to a wafer by using a multiple-patterning technique by using the plurality of masks.