Architecture for an electrochemical artificial neural network
AssigneeIBM Corporation
InventorsMatthew Warren COPEL, James Bowler Hannon, Satoshi Oida, John Jacob Yurkas
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Abstract
A resistive element in an electrochemical artificial neural network, includes a transition metal oxide thin film forming a working electrode, a pair of first electrodes connected to the working electrode, and a reference electrode for electrochemical doping of the working electrode. The biasing of the pair of first electrodes with respect to the reference electrode according to a determination of conductivity between the pair of first electrodes controls the resistance of the working electrode.
Claims20
A resistive element in an electrochemical artificial neural network, comprising:
- a transition metal oxide thin film forming a working electrode;
- a pair of first electrodes connected to the working electrode;
- and
- a reference electrode for electrochemical intercalation of the working electrode,
- wherein biasing of the pair of first electrodes or the reference electrode according to a determination of conductivity between the pair of first electrodes controls a resistance of the working electrode.
A method for forming a resistive element in an electrochemical artificial neural network, comprising:
- forming a transition metal oxide thin film as a working electrode;
- forming a pair of first electrodes connected to the working electrode;
- forming a reference electrode for electrochemical doping of the working electrode;
- determining conductivity between the pair of first electrodes;
- and
- controlling a resistance of the working electrode by biasing the pair of first electrodes or the reference electrode according to a determination of conductivity between the pair of first electrodes.
A cross point array in an electrochemical artificial neural network, comprising:
- a three terminal device or a four terminal device formed at each cross point in an array,
- wherein the three terminal device comprises:
- a first terminal and a second terminal configured to be biased to modulate a resistance of a first transition metal oxide film of the three terminal device according to a determination of conductivity between the first and second terminals;
- and
- a third terminal configured as a global reference electrode for electrochemical doping of the first transition metal oxide film, and wherein the four terminal device comprises:
- a first and a second terminal configured to measure a resistance of a second transition metal oxide film;
- a third terminal configured as a global reference electrode for electrochemical doping of a second transition metal oxide film;
- and
- a fourth terminal configured as a back contact that is grounded,
- wherein the third terminal with respect to the fourth terminal is configured to be biased to modulate a resistance of the second transition metal oxide film of the four terminal device according to the measurement of the resistance,
- wherein the reference electrode is of a same type for each cross point in the array.
Dependencies are inferred from the claim text.