Bonded wafer production method and bonded wafer

Abstract

A bonded wafer production method for producing a bonded wafer having a thin film on a base wafer by forming an ion implanted layer in a bond wafer by implanting at least one of gas ion of a hydrogen ion and a rare gas ion from a surface of the bond wafer and, after directly bonding an ion implanted surface of the bond wafer and a surface of the base wafer together or bonding the ion implanted surface of the bond wafer and the surface of the base wafer together with an insulator film placed therebetween, delaminating the bond wafer at the ion implanted layer, wherein, as at least one of the bond wafer and the base wafer, an epitaxial wafer is used, and, as cleaning of the epitaxial wafer which is performed before the formation of an epitaxial layer, single wafer processing spin cleaning is performed.

Dependencies are inferred from the claim text.