Method of singulating semiconductor wafer having a plurality of die and a back layer disposed along a major surface
AssigneeSemiconductor Components Industries, LLC
InventorGordon M. GRIVNA
Life of this patent
Estimating the term…
Abstract
Die are singulated from a wafer having a back layer by placing the wafer onto a first carrier substrate with the back layer adjacent the carrier substrate, forming singulation lines through the wafer to expose the back layer within the singulation lines, and using a plate structure to apply a pressure to the wafer to separate the back layer in the singulation lines. The pressure can be applied through the first carrier substrate proximate to the back layer, or can be applied through a second carrier substrate attached to a front side of the wafer opposite to the back layer.
Claims20
A method of singulating a wafer comprising:
- providing a wafer having first and second opposing major surfaces, a plurality of die formed as part of the wafer, a layer of material along the second major surface, the plurality of die separated by singulation lines that terminate in proximity to the layer of material, and a first carrier substrate adjoining the layer of material;
- placing a substrate adjacent the first major surface of the wafer such that the wafer is interposed between the first carrier substrate and the substrate;
- providing a compressive layer;
- providing a mechanical device;
- placing the wafer in between the compressive layer and the mechanical device;
- and
- moving the mechanical device in a direction generally parallel to and adjoining one of the first carrier substrate or the substrate to separate the layer of material in the singulation lines.
A method of forming an electronic device comprising:
- providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces, wherein the wafer has first and second opposing major surfaces, and wherein a layer of material is formed adjacent to the second major surface, and wherein the layer of material is placed adjacent to a first carrier substrate;
- forming singulation lines in the wafer through the spaces, wherein singulation lines terminate at least proximate to the layer of material;
- placing the wafer onto a second carrier substrate, wherein the layer of material is opposite to the second carrier substrate;
- placing the wafer adjacent to a compressive layer;
- and
- moving a mechanical device along one of the first or second carrier substrates with the wafer adjacent the compressive layer to separate the layer of material in the singulation lines.
A method of forming an electronic device comprising:
- providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces, wherein the wafer has first and second opposing major surfaces, and wherein a layer of material is formed adjacent to the second major surface, and wherein the layer of material is placed adjacent to a first carrier substrate;
- forming singulation lines in the wafer through the spaces, wherein singulation lines terminate at least proximate to the layer of material;
- placing the wafer adjacent to a compressive layer;
- and
- moving a mechanical device in a direction generally parallel to adjacent one of the first major surface and the second major surface of the wafer to separate the layer of material in the singulation lines.
Dependencies are inferred from the claim text.