Apparatus and techniques for decelerated ion beam with no energy contamination
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsFrank Sinclair, Daniel Tieger, Klaus Becker
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Abstract
An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.
Claims18
An ion implantation system, comprising:
- an ion source to generate an ion beam;
- a substrate stage disposed downstream of the ion source;
- a deceleration stage including a component to deflect the ion beam, the deceleration stage disposed between the ion source and substrate stage;
- and
- a hydrogen source to provide hydrogen gas to the deceleration stage,
- wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.
A method of ion implantation, comprising:
- generating an ion beam;
- decelerating the ion beam in a deceleration stage;
- altering a trajectory of the ion beam during the decelerating;
- and
- directing hydrogen gas into the deceleration stage during the decelerating.
A deceleration stage to treat an ion beam, comprising:
- a housing to contain the ion beam;
- a deceleration assembly to decelerate the ion beam, the deceleration assembly disposed upstream of a substrate stage, and including a first plurality of electrodes disposed within the housing;
- a deflection assembly to deflect the ion beam, the deflection assembly including a second plurality of electrodes disposed within the housing, wherein a trajectory of the ion beam is altered;
- and
- a hydrogen source to provide hydrogen gas inside the housing,
- wherein a partial pressure of hydrogen inside the housing is greater than 10 Torr.
Dependencies are inferred from the claim text.