Thin film transistor, display substrate and display panel having the same, and fabricating method thereof
AssigneeBoe Technology Group Co., Ltd.
InventorsKe Wang, Ce Ning
Life of this patent
Estimating the term…
Abstract
The present application discloses a thin film transistor, a display substrate and display panel having the same, and a fabricating method thereof. The thin film transistor includes a base substrate; an active layer on the base substrate having a channel region, a first electrode contact region, and a second electrode contact region; and a first electrode on a side of the first electrode contact region distal to the base substrate; and a second electrode on a side of the second electrode contact region distal to the base substrate; the first electrode and the second electrode being made of an amorphous carbon material.
Claims21
A thin film transistor, comprising:
- a base substrate;
- an active layer on the base substrate comprising a channel region, a first electrode contact region, and a second electrode contact region;
- and
- a first electrode on a side of the first electrode contact region distal to the base substrate;
- and a second electrode on a side of the second electrode contact region distal to the base substrate;
- the first electrode and the second electrode being made of an amorphous carbon material.
A method of fabricating a thin film transistor, comprising:
- forming an active layer on a base substrate having a channel region, a first electrode contact region, and a second electrode contact region;
- forming a first electrode on a side of the first electrode contact region distal to the base substrate;
- and
- forming a second electrode on a side of the second electrode contact region distal to the base substrate;
- the first electrode and the second electrode being made of an amorphous carbon material.
(canceled)
Dependencies are inferred from the claim text.