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US 2018/0247802 A1Published application
Microchannel plate and electron multiplier
AssigneeHamamatsu Photonics K.K.
InventorsTakaaki NAGATA, Yasumasa HAMANA, Hajime NISHIMURA, Kimitsugu NAKAMURA
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Abstract
A microchannel plate is provided with a substrate including a front surface, a rear surface, and a side surface, a plurality of channels penetrating from the front surface to the rear surface of the substrate, a first film provided on at least an inner wall surface of the channel, a second film provided on the first film, and electrode layers provided on the front surface and the rear surface of the substrate. The first film is made of Al2O3. The second film is made of SiO2. The first film is thicker than the second film.
Claims18
1:
- A microchannel plate comprising:
- a substrate including a front surface, a rear surface, and a side surface;
- a plurality of channels penetrating from the front surface to the rear surface of the substrate;
- a first film provided on at least an inner wall surface of the channel;
- a second film provided on the first film;
- and
- electrode layers provided on the front surface and the rear surface of the substrate,
- wherein the first film is made of Al2O3,
- the second film is made of SiO2, and
- the first film is thicker than the second film.
7 more elements
2:
- The microchannel plate according to claim 1, wherein a thickness of the first film is 10 angstroms or more when being calculated using X-ray fluorescence analysis.
3:
- The microchannel plate according to claim 1,
- wherein the substrate is made of an insulating material, and
- a resistance film is formed between the inner wall surface of the channel and the first film.
4:
- The microchannel plate according to claim 1, wherein the substrate is made of a resistant material.
5:
- The microchannel plate according to claim 1,
- wherein the first film and the second film are formed on the front surface, the rear surface, and the side surface of the substrate, and
- the electrode layers are formed on the second film.
6:
- The microchannel plate according to claim 1,
- wherein the electrode layers are formed so as to be in contact with the front surface and the rear surface of the substrate, and
- the first film and the second film are formed on the electrode layers, and the front surface, the rear surface, and the side surface of the substrate.
7:
- The microchannel plate according to claim 3,
- wherein the resistance film, the first film, and the second film are formed on the front surface, the rear surface, and the side surface of the substrate, and
- the electrode layers are formed on the second film.
8:
- The microchannel plate according to claim 3,
- wherein the electrode layers are formed so as to be in contact with the front surface and the rear surface of the substrate, and
- the resistance film, the first film, and the second film are formed on the front surface, the rear surface, and the side surface of the substrate.
9:
- The microchannel plate according to claim 1,
- wherein the first film and the second film are layers formed by atomic layer deposition.
10:
- An electron multiplier comprising:
- a main body including a front surface, a rear surface, and a side surface;
- a channel penetrating from the front surface to the rear surface of the main body;
- a first film provided on at least an inner wall surface of the channel;
- a second film provided on the first film;
- and
- electrode layers provided on the front surface and the rear surface of the main body,
- wherein the first film is made of Al2O3,
- the second film is made of SiO2, and
- the first film is thicker than the second film.
7 more elements
11:
- The electron multiplier according to claim 10, wherein a thickness of the first film is 10 angstroms or more when being calculated using X-ray fluorescence analysis.
12:
- The electron multiplier according to claim 10,
- wherein the main body is made of an insulating material, and
- a resistance film is formed between the inner wall surface of the channel and the first film.
13:
- The electron multiplier according to claim 10, wherein the main body is made of a resistant material.
14:
- The electron multiplier according to claim 10,
- wherein the first film and the second film are formed on the front surface, the rear surface, and the side surface of the main body, and
- the electrode layers are formed on the second film.
15:
- The electron multiplier according to claim 10,
- wherein the electrode layers are formed so as to be in contact with the front surface and the rear surface of the main body, and
- the first film and the second film are formed on the electrode layers, and the front surface, the rear surface, and the side surface of the main body.
16:
- The electron multiplier according to claim 12,
- wherein the resistance film, the first film, and the second film are formed on the front surface, the rear surface, and the side surface of the main body, and
- the electrode layers are formed on the second film.
17:
- The electron multiplier according to claim 12,
- wherein the electrode layers are formed so as to be in contact with the front surface and the rear surface of the main body, and
- the resistance film, the first film, and the second film are formed on the front surface, the rear surface, and the side surface of the main body.
18:
- The electron multiplier according to claim 10, wherein the first film and the second film are layers formed by atomic layer deposition.