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US 2018/0218872 A1Published application
Piezoelectric vacuum transistor
AssigneeInternational Business Machines Corporation
InventorsQing Cao, Kangguo Cheng, Zhengwen Li, Fei Liu
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Abstract
A vacuum transistor includes a substrate and a first terminal formed on the substrate. A piezoelectric element has a second terminal formed on the piezoelectric element, wherein the piezoelectric element is provided over the first terminal to provide a gap between the first terminal and the second terminal. The gap is adjusted in accordance with an electrical field on the piezoelectric element.
Claims6
A method for fabricating a vacuum transistor, comprising:
- forming a first terminal on a substrate;
- forming a second terminal on a piezoelectric element, wherein the piezoelectric element is provided over the first terminal to provide a gap between the first terminal and the second terminal;
- forming electrodes on the piezoelectric element such that the electrodes control a gap distance in accordance with an electrical field placed on the piezoelectric element;
- and
- evacuating the gap.
2 more elements
Dependencies are inferred from the claim text.