Method for manufacturing thin film transistor
AssigneeWuhan China Star Optoelectronics Technology Co., Ltd.
InventorTao Sun
Life of this patent
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Abstract
Disclosed is a method for manufacturing a thin film transistor. The method includes steps of etching a second metal layer and a semiconductor layer to form a boundary region of a thin film transistor; etching the second metal layer again to form a source, a drain and a back channel region of the thin film transistor; removing residual photoresist via an ashing procedure; and etching the semiconductor layer again to form a conductive channel of the thin film transistor. According to the method, the electric leakage problem of thin film transistor due to diffusion of copper and contamination of organic stripping liquid can be eliminated.
Claims10
A method for manufacturing a thin film transistor, comprising steps of:
- forming a first metal layer on a substrate, and patterning the first metal layer to form a gate of the thin film transistor;
- forming a gate insulating layer on the gate;
- forming a semiconductor layer and a second metal layer in sequence on the gate insulating layer;
- coating a photoresist on the second metal layer;
- etching the second metal layer and the semiconductor layer to form a boundary region of the thin film transistor;
- etching the second metal layer again to form a source, a drain and a back channel region of the thin film transistor;
- removing residual photoresist via an ashing procedure;
- and
- etching the semiconductor layer again to form a conductive channel of the thin film transistor.
Dependencies are inferred from the claim text.