Inorganic semiconducting compounds
OwnerTom NILGES, Daniela PFISTER +4inventors
InventorsTom NILGES, Daniela PFISTER, Claudia OTT, Konrad SCHÄFER, Maximilian BAUMGARTNER, Richard WEIHRICH
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Abstract
Provided are compounds of the formula MA1-xMBxXA1-yXByQA1-zQBz, wherein MA and MB are selected from Si, Ge, Sn, and Pb, XA and XB are selected from F, Cl, Br and I, QA and QB are selected from P, As, Sb and Bi, and x, y and z are 0 to 0.5, as well as doped variants thereof, useful as semiconducting materials. Due a double helix structure formed by the constituting atoms, the compounds are particularly suitable to provide nano-materials, in particular nanowires, for diverse applications.
Claims15
A compound of formula (Ia):
- MA1-xMBxXA1-yXByQA1-zQBz (Ia),
- wherein:
- MA is an element selected from Si, Ge, Sn, and Pb,
- MB is an element selected from Si, Ge, Sn, and Pb and from combinations thereof such that MB is not the same as MA and does not contain MA, and x is 0 to 0.50;
- XA is an element selected from F, Cl, Br and I,
- XB is an element selected from F, Cl, Br and I and from combinations thereof such that XB is not the same as XA and does not contain XA, and
- y is 0 to 0.50;
- QA is an element selected from P, As, Sb and Bi,
- QB is an element selected from P, As, Sb and Bi and from combinations thereof such that QB is not the same as QA and does not contain QA,
- z is 0 to 0.50;
- or a compound which is a doped variant of the compound of formula (Ia), and which further contains:
- an element MD, selected from Al, Ga, In and from combinations thereof, in a maximum amount of 10 mol % based on the total molar amount of MA and MB, which element MD may partially replace MA and/or MB in formula (Ia);
- and/or
- an element QD, selected from S, Se, Te and from combinations thereof, in a maximum amount of 10 mol % based on the total molar amount of XA, XB, QA and QB, which element QD may partially replace XA, XB, QA and/or QB in formula (Ia).
Dependencies are inferred from the claim text.