# US 2018/0190548 A1 · Method and a device for measuring gas dissociation degrees with an optical spectrometer

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- Number: US 2018/0190548 A1
- Document ID: US20180190548A1
- Status: Published application
- Kind: A1
- Application number: 15/606,809
- Filed: 2017-05-26
- Published: 2018-07-05
- Earliest claimed: 2017-01-05
- Assignees: FairTech Corporation
- Inventors: Jui-Pao PAN
- Web page: https://patentgrep.com/patent/US20180190548A1

## CPC

- H10P 74/238: {comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement}
- G01N 21/85: Investigating moving fluids or granular solids
- H01J 37/32972: {Spectral analysis}
- G01N 21/94: Investigating contamination, e.g. dust (G01N21/85 takes precedence)
- G01N 2021/8416: {and process controlling, not otherwise provided for}
- G01N 2021/8578: {Gaseous flow}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

In current application of gas, the dissociation degree in some special gas is generally detected and controlled by a physical or chemical method instead of an optical one. Solution schemes that are adopted include but are not limited to adjusting gas flow rates, gas proportioning or gas disposal. But up to now there has not been any definitively effective solution scheme. A primary objective of the present invention is to provide a method and a device for measuring gas dissociation degrees. The principle of the present invention is to detect the gas dissociation degree in a tube body and to calculate the relative dissociation quantity value by means of a device according to the present invention. When the contamination value in a primary path of gas is too high, an appropriate amount of dissociated reactive gas is discharged via a second path to remove contaminants in the primary path to achieve efficient and effective cleaning. The primary path and the second path connected to the primary path are provided for storing reactive gas. The primary path is provided to perform the processes of plasma-assisted deposition, membrane etching and material surface modification to achieve special functions and effects. The present invention may be applied to any device and/or any apparatus that requires measuring of gas dissociation degrees, including but not limited to physical vapor deposition device, chemical vapor deposition device, etching device and any other relevant device in the semiconductor, photoelectric, panel industries and any other relevant industry. The present invention may also be directly disposed in a remote plasma source device. Further, the present invention may be applied in any inspection examination device in the biotechnology, chemistry, applied physics industries and any other relevant industry. Still further, the present invention may be applied to any inspection apparatus or testing platform in the equipment maintenance industry for any of the foregoing industries. A measuring method and a device according to the present invention may be applied in various locations for measuring gas dissociation degrees and are not limited to the chamber referred to in the preferred embodiments. Any location where a gas dissociation degree measuring device is disposed is within the scope of the present invention. The preferred embodiments in the specifications are illustrated of the present invention rather than limiting of the present invention, citing devices for physical vapor deposition, chemical vapor deposition or etching in the semiconductor industry as examples.

## Claims

### Claim 1

A method and a device for measuring gas dissociation degrees with an optical spectrometer, comprising:
a main path for performing the processes of plasma-assisted deposition, membrane etching and material surface modification to achieve special functions and effects in semiconductor integrated circuit manufacturing;
a second path connected to the main path for storing reactive gas;
a detecting element and an optical spectrum plasma gas dissociation measuring device disposed between the main path and the second path, wherein the detecting element detects a gas dissociation degree in a tube body and the optical spectrum plasma gas dissociation measuring device calculates a relative dissociation quantity value.

### Claim 2 (depends on 1)

A method and a device for measuring gas dissociation degrees with an optical spectrometer of claim 1, wherein the main path and the second path are connected with a tube body and the detecting element and optical spectrum plasma gas dissociation measuring device are disposed at appropriate locations in the tube body.

### Claim 3 (depends on 1)

A method and a device for measuring gas dissociation degrees with an optical spectrometer of claim 1, wherein the detecting element and optical spectrum plasma gas dissociation measuring device are disposed at appropriate locations in the main path.

### Claim 4 (depends on 1)

A method and a device for measuring gas dissociation degrees with an optical spectrometer of claim 1, wherein the detecting element and optical spectrum plasma gas dissociation measuring device are disposed at appropriate locations in the second path.

### Claim 5 (depends on 1)

A method and a device for measuring gas dissociation degrees with an optical spectrometer of claim 1, wherein the detecting element and optical spectrum plasma gas dissociation measuring device are disposed at appropriate locations in the fluid path.

### Claim 6 (depends on 1)

A method and a device for measuring gas dissociation degrees with an optical spectrometer of claim 1, wherein the detecting element and optical spectrum plasma gas dissociation measuring device may be applied in a device in a plasma source device, a plasma gas chamber or an electrical control system.

### Claim 7

A method and a device for measuring gas dissociation degrees with an optical spectrometer, whose application includes but is not limited to disposition in a physical vapor deposition device, chemical vapor deposition device, etching device and any other relevant device in the semiconductor, photoelectric, panel industries and any other relevant industry, direct disposition in a remote plasma source device, and disposition in any inspection examination device in the biotechnology, chemistry, applied physics industries and any other relevant industry, and in any inspection apparatus or testing platform in the equipment maintenance industry for any of the foregoing industries.
