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US 2018/0186623 A1Published application
Fet based sensory systems
OwnerKris Vossough, Farhang Yazdaniinventors
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Abstract
This invention describes the structure and function of an integrated multi-sensing system. Integrated systems described herein may be configured to form a microphone, pressure sensor, gas sensor, multi-axis gyroscope or accelerometer. The sensor uses a variety of different Field Effect Transistor technologies (horizontal, vertical, Si nanowire, CNT, SiC and III-V semiconductors) in conjunction with MEMS based structures such as cantilevers, membranes and proof masses integrated into silicon substrates. It also describes a configurable method for tuning the integrated system to specific resonance frequency using electronic design.
Claims20
A sensor, comprising:
- One or more transistors;
- and
- One or more cantilevers;
- Wherein the said cantilever edge behaves as moving gate of the said transistor;
- Wherein electric field is applied to the said cantilever edge;
- Wherein the said transistor is biased;
- Where in the said cantilever is flexible;
- Wherein the said cantilever can flex due to acoustic signals;
- Wherein the said cantilever can flex due to pressure;
- Where in the said deflection in said cantilever modulates the drain current in the said transistor;
- Wherein the source and drain wells of the said transistor can be coplanar or stacked;
- Wherein the said cantilever edge can move in the lateral or parallel direction with respect to the said transistor current;
- Wherein the said cantilever edge can move in the vertical or perpendicular direction with respect to the said transistor current;
- Wherein the magnitude of the change in said drain current determines the sensitivity to the said acoustic signals or said pressure.
11 more elements
A sensor, comprising:
- One or more transistors;
- and
- One or more cantilevers;
- and
- One or more proof masses;
- Wherein the said proof mass edge behaves as moving gate of the said transistor;
- Wherein electric field is applied to the said proof mass edge;
- Wherein the said transistor is biased;
- Where in the said cantilever is flexible;
- Wherein the said proof mass is coupled to said cantilever;
- Where in the said proof mass coupled to the said cantilever displaces with two or more degrees of freedom;
- Wherein the said proof mass resonates in one direction and displaces in another direction due to Coriolis force;
- Wherein the said proof mass displacement modulates the drain current in the said transistor;
- Wherein the displacement of the said proof mass can be measured in the direction of the resonance and Coriolis force displacement;
- Wherein the source and drain wells of the said transistor can be coplanar or stacked;
- Wherein the said proof mass edge can move in the lateral or parallel direction with respect to the said transistor current;
- Wherein the said proof mass edge can move in the vertical or perpendicular direction with respect to the said transistor current;
- and
- Wherein the magnitude of the change in said drain current determines the sensitivity of the displacement of the proof mass.
16 more elements
A sensor, comprising:
- One or more transistors;
- and
- One or more membranes;
- Wherein the said membrane edge behaves as moving gate of the said transistor;
- Wherein electric field is applied to the said membrane edge;
- Wherein the said transistor is biased;
- Where in the said membrane is flexible;
- Wherein the said membrane can flex due to acoustic signals;
- Wherein the said membrane can flex due to pressure;
- Where in the said deflection in said membrane modulates the drain current in the said transistor;
- Wherein the source and drain wells of the said transistor can be coplanar or stacked;
- Wherein the said membrane edge can move in the lateral or parallel direction with respect to the said transistor current;
- Wherein the said membrane edge can move in the vertical or perpendicular direction with respect to the said transistor current;
- Wherein the magnitude of the change in said drain current determines the sensitivity to the said acoustic signals or said pressure;
- Wherein said membrane is attached to a substrate using elevated membrane support structure;
- and
- Wherein the one or more said membranes are arranged in stacked configuration to transfer maximum deflection of the sensing membrane.
14 more elements
Dependencies are inferred from the claim text.