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AssigneeLG Siltron Inc.
InventorsYun-Goo KIM, Gwang-Ha NA, Yun-Ha AN
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The embodiments of the present invention provides a diameter controlling system of the single crystal ingot for controlling a diameter deviation of a silicon ingot during the growth of silicon ingot by a Czochralski method, it may include a seed chuck for supporting a silicon ingot combined with a seed crystal and grown; a measuring part connected to an upper surface of the seed chuck with a cable and configured to measure a load applied to the seed chuck; a load adjusting part for moving a position of the seed chuck vertically while the seed chuck is connected to the cable to change a load applied to the silicon ingot; and a controlling part for controlling the load applied to the silicon ingot by driving the load adjusting part according to the load value measured from the measuring part. Therefore, shaking of the seed during the growth process of the single crystal ingot is prevented, and thus the diameter deviation of the growing single crystal ingot may be reduced.
A diameter controlling system of a single crystal ingot as a system of controlling a diameter deviation of the silicon ingot during growth of the silicon ingot by a Czochralski method, the system comprising:
A diameter controlling method of a single crystal ingot as a method of controlling a diameter deviation of a silicon ingot by using a single crystal growing apparatus provided with a part for applying a certain load to a seed chuck for supporting a seed in order to grow the silicon ingot by a Czochralski method, the method comprising the steps of:
Dependencies are inferred from the claim text.