Multilayer thin films exhibiting perpendicular magnetic anisotropy
AssigneeKorea University Research and Business Foundation
InventorsYoung Keun Kim, Yong Jin Kim
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Abstract
A method for forming a multilayer thin film exhibiting perpendicular magnetic anisotropy includes alternately sputtering a CoFeSiB target and a Pd target inside a vacuum chamber to form a [CoFeSiB/Pd] multilayer thin film on a substrate disposed inside the vacuum chamber. The number of times the [CoFeSiB/Pd] multilayer thin film is stacked may be 3 or more.
Claims19
A method for forming a CoFeSiB/Pd multilayer thin film exhibiting perpendicular magnetic anisotropy, the method comprising:
- alternate sputtering a CoFeSiB target and a Pd target inside a vacuum chamber to form the [CoFeSiB/Pd] multilayer thin film on a substrate disposed inside the vacuum chamber,
- wherein a number of times the [CoFeSiB/Pd] multilayer thin film is stacked is 3 or more.
A method for forming a CoSiB/Pd multilayer thin film, the method comprising:
- alternate sputtering a CoSiB target and a Pd target inside a vacuum chamber to form the [CoSiB/Pd] multilayer thin film on a substrate disposed inside the vacuum chamber,
- wherein a number of times the [CoSiB/Pd] multilayer thin film is stacked is 3 or more.
A CoFeSiB/Pd multilayer thin film exhibiting perpendicular magnetic anisotropy, the CoFeSiB/Pd multilayer thin film comprising:
- a [CoFeSiB/Pd] multilayer thin film disposed on a substrate,
- wherein a number of times the [CoFeSiB/Pd] multilayer thin film is stacked is 3 or more.
Dependencies are inferred from the claim text.