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US 2018/0158475 A1Published application
Magnetoresistance Element with Improved Response to Magnetic Fields
AssigneesAllegro MicroSystems, LLC, Commissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsPaolo Campiglio, Bryan Cadugan, Claude Fermon, Rémy Lassalle-Balier
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Abstract
A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.
Claims21
A magnetoresistance element deposited upon a substrate, comprising:
- a stack of layers disposed upon a substrate, the stack of layers comprising:
- a first antiferromagnetic pinning layer disposed over the substrate;
- a second antiferromagnetic pinning layer disposed over the substrate;
- a first synthetic antiferromagnet (SAF) structure disposed proximate to the first antiferromagnetic pinning layer;
- and
- a second synthetic antiferromagnet (SAF) structure disposed proximate to the second antiferromagnetic pinning layer, wherein the first and second synthetic antiferromagnet (SAF) structures are disposed between the first and second antiferromagnetic pinning layers, wherein the first and second antiferromagnetic pinning layers have different thicknesses.
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A method of fabricating a magnetoresistance element, comprising:
- depositing the magnetoresistance element in a stack of layers upon a substrate, the stack of layers comprising:
- a first antiferromagnetic pinning layer disposed over the substrate;
- a second antiferromagnetic pinning layer disposed over the substrate;
- a first synthetic antiferromagnet (SAF) structure disposed proximate to the first antiferromagnetic pinning layer;
- and
- a second synthetic antiferromagnet (SAF) structure disposed proximate to the second antiferromagnetic pinning layer, wherein the first and second synthetic antiferromagnet (SAF) structures are disposed between the first and second antiferromagnetic pinning layers, wherein the first and second antiferromagnetic pinning layers have different thicknesses.
3 more elements
Dependencies are inferred from the claim text.