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US 2018/0143526 A1Published application
Ebeam three beam aperture array
AssigneeIntel Corporation
InventorsYan A. BORODOVSKY, Donald W. NELSON, Mark C. PHILLIPS
Life of this patent
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Abstract
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.
Claims23
A blanker aperture array (BAA) for an e-beam tool, the BAA comprising:
- a first array comprising a first column of openings along a first direction and having a first pitch, and comprising a second column of openings along the first direction and staggered from the first column of openings, the second column of openings having the first pitch;
- a second array comprising a third column of openings along the first direction and having a second pitch, and comprising a fourth column of openings along the first direction and staggered from the third column of openings, the fourth column of openings having the second pitch, wherein the second pitch is different than the first pitch;
- and
- a third array comprising a fifth column of openings along the first direction and having a third pitch, and comprising a sixth column of openings along the first direction and staggered from the fifth column of openings, the sixth column of openings having the third pitch, wherein the third pitch is different than the first pitch and different than the second pitch, and wherein a scan direction of the BAA is along a second direction, orthogonal to the first direction.
1 more element
A blanker aperture array (BAA) for an e-beam tool, the BAA comprising:
- a first array comprising a first column of openings along a first direction, and comprising a second column of openings along the first direction and staggered from the first column of openings;
- a second array comprising a third column of openings along the first direction, and comprising a fourth column of openings along the first direction and staggered from the third column of openings, wherein openings of the third and fourth columns of openings are larger than openings of the first and second columns of openings;
- and
- a third array comprising a fifth column of openings along the first direction, and comprising a sixth column of openings along the first direction and staggered from the fifth column of openings, wherein openings of the fifth and sixth columns of openings are larger than openings of the third and fourth columns of openings, and wherein a scan direction of the BAA is along a second direction.
1 more element
A method of forming a pattern for a semiconductor structure, the method comprising:
- forming a pattern of parallel lines above a substrate, the pattern of parallel lines having a first portion, a second portion, and a third portion;
- aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool, wherein the e-beam tool comprises a column having a blanker aperture array (BAA) comprising:
- a first array comprising a first column of openings along an array direction and a second column of openings along the array direction and staggered from the first column of openings;
- a second array comprising a third column of openings along the array direction and a fourth column of openings along the array direction and staggered from the third column of openings, wherein openings of the third and fourth columns of openings are larger than openings of the first and second columns of openings;
- and
- a third array comprising a fifth column of openings along the array direction and a sixth column of openings along the array direction and staggered from the fifth column of openings, wherein openings of the fifth and sixth columns of openings are larger than openings of the third and fourth columns of openings;
- selecting one array from the first array, the second array or the third array of the BAA;
- and
- forming a pattern of cuts or vias in or above the corresponding one of the first portion, the second portion or the third portion of the pattern of parallel lines to provide line breaks for the corresponding one of the first portion, the second portion or the third portion of the pattern of parallel lines by scanning the substrate along the scan direction.
6 more elements
Dependencies are inferred from the claim text.