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US 2018/0123320 A1Published application
Semiconductor laser diode having multi-quantum well structure
AssigneeSumitomo Electric Device Innovations, Inc.
InventorNaoki OGAWA
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Abstract
A semiconductor laser diode (LD) having an optical grating is disclosed. The LD includes a lower cladding layer that buries the optical grating, an active layer, and an upper cladding layer. The active layer has the multi-quantum well (MQW) structure of barrier layers and well layers alternately arranged to each other. The MQW structure further includes intermediate layers between the barrier layers and the well layers, and have lattice constant between that of the barrier layer and that of the well layer. The inter mediate layer has a thickness thinner than 1 nm.
Claims12
A semiconductor laser diode, comprising:
- a semiconductor substrate made of indium phosphide (InP);
- an optical grating provided on the semiconductor substrate;
- an n-type layer that buries the optical grating;
- and
- an active layer that has an arrangement of multi-quantum well (MQW) structure including a plurality of barrier layers and a plurality of well layers alternately stacked to each other, the barrier layers having tensile stress and the well layer having compressive stress, the MQW structure further providing a plurality of intermediate layers each sandwiched between the barrier layers and the well layers,
- wherein the intermediate layers each have stress between the barrier layers and the well layers, and a thickness thinner than 1 nm.
3 more elements
Dependencies are inferred from the claim text.