Method, system and apparatus for higher order mode suppression

A laser diode, comprising:

• a transverse waveguide comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer wherein the transverse waveguide is bounded by a lower index n-cladding layer on an n-side and a p-cladding layer on a p-side;
• a lateral waveguide that is orthogonal to the transverse waveguide, the lateral waveguide defined by at least one of an etched ridge or current injection with gain guiding, or a combination thereof, the lateral waveguide bounded in the longitudinal direction at a first end by a facet coated with a high reflector coating and at a second end by a facet coated with a partial reflector coating;
• and
• a higher order mode suppression layer (HOMSL) disposed adjacent to the lateral waveguide and extending in a longitudinal direction from the HR facet a length less than the distance between the HR facet and the PR facet.

A laser diode, comprising:

• a transverse waveguide comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer wherein the transverse waveguide is bounded by a lower index n-cladding layer on an n-side and a p-cladding layer on a p-side;
• a lateral waveguide that is orthogonal to the transverse waveguide, the lateral waveguide defined by current injection with gain guiding;
• an n-metal contact on the n-side;
• and
• a p-metal contact on the p-side of the laser diode, wherein the n-metal contact is configured to enable a lateral carrier distribution pattern from the n-metal contact to the p-metal contact such that higher order mode proliferation is suppressed in the lateral waveguide via reduced gain exposure of the higher order modes versus gain exposure to the lower order modes and a fundamental mode.