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US 2018/0123064 A1Published application
Method of manufacturing thin film transistor, thin film transistor, and electronic device comprising the thin film transistor
AssigneeSamsung Electronics Co., Ltd.
InventorsAjeong Choi, Joo Young Kim, Youngjun Yun, Yong-Uk Lee, Jiyoung Jung
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Abstract
A method of manufacturing an organic thin film transistor includes forming a gate insulating layer on a gate electrode, forming a mold on the gate insulating layer, the mold including a void, forming a self-assembled layer from a self-assembled layer precursor in the void of the mold, removing the mold, and forming an organic semiconductor on the gate insulating layer.
Claims16
A method of manufacturing an organic thin film transistor, comprising:
- forming a gate electrode;
- forming a gate insulating layer on the gate electrode;
- forming a mold on the gate insulating layer, the mold including a void;
- forming a self-assembled layer from a self-assembled layer precursor in the void of the mold;
- removing the mold;
- and
- forming an organic semiconductor on the gate insulating layer.
4 more elements
Dependencies are inferred from the claim text.