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US 2018/0123039 A1Published application
Clamp elements for phase change memory arrays
AssigneeMicron Technology, Inc.
InventorsAntonino Rigano, Fabio Pellizzer
Life of this patent
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Abstract
Clamp elements, memories, apparatuses, and methods for forming the same are disclosed herein. An example memory may include an array of memory cells and a plurality of clamp elements. A clamp element of the plurality of clamp elements may include a cell structure formed non-orthogonally relative to at least one of a bit line or a word line of the array of memory cells and may be configured to control a voltage of a respective bit line.
Claims20
A method for forming cell structures, comprising:
- forming a chalcogenic material over a plurality of contacts;
- after forming the chalcogenic material, forming a mask material;
- forming, in a mask material, a mask hole non-orthogonally relative to a row of contacts;
- removing the mask material;
- removing a portion of the chalcogenic material to form a plurality of chalcogenic material elements;
- and
- forming a plurality of bit lines over the chalcogenic material elements.
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A method comprising:
- forming a mask material having a first and second plurality of mask holes, the first plurality of mask holes formed parallel to a row of contacts, the second plurality of mask holes formed at a non-orthogonal angle relative the row of contacts, the contacts aligned in at least one of a bit line direction or a word line direction;
- forming a conductive material and a spacer material over the mask material and in the first and the second plurality of mask holes;
- removing portions of the conductive material and the spacer material to form a plurality of conductive elements and a plurality of spacer elements;
- and
- forming a plurality of bit lines over the plurality of conductive elements and spacer elements.
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Dependencies are inferred from the claim text.