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US 2018/0123037 A1Published application
Methods, apparatuses, and circuits for programming a memory device
AssigneeMicron Technology, Inc.
InventorsAndrea Redaelli, Agostino Pirovano, Umberto M. Meotto
Life of this patent
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Abstract
Subject matter described pertains to methods, apparatuses, and circuits for programming a memory device.
Claims20
A device, comprising:
- a conductive plug positioned below an arrangement of stacked materials;
- a conductor positioned over the arrangement and offset from directly above the conductive plug;
- and
- a separation material included in the arrangement and positioned below the conductor, wherein an edge of the separation material laterally extends farther than an edge of the conductor in a first direction.
1 more element
A method, comprising:
- applying a current to a conductor of a memory device;
- forming a current path from the conductor to a switching device via a separation material and a memory material based at least in part on applying the current;
- changing a phase of the memory material from a first phase to a second phase based at least in part on forming the current path;
- and
- storing a state in the memory material based at least in part on changing the phase of the memory material.
2 more elements
A memory apparatus, comprising:
- a conductor above a separation material;
- a memory material below the separation material;
- and
- a controller in electronic communication with the conductor and the memory material, the controller being operable to:
- apply a current to the conductor of a memory device;
- form a current path from the conductor to a switching device via the memory material based at least in part on applying the current;
- change a phase of the memory material from a first phase to a second phase based at least in part on forming the current path;
- and
- store a state in the memory material based at least in part on changing the phase of the memory material.
6 more elements
Dependencies are inferred from the claim text.