US 2018/0123036 A1 · SEMICONDUCTOR STRUCTURES INCLUDING MULTI-PORTION LINERS

Abstract

A method of forming a semiconductor structure. The method comprises forming a protective portion of a liner on at least a portion of stack structures on a substrate. The protective portion comprises a material formulated to adhere to the stack structures. A conformal portion of the liner is formed on the protective portion of the liner or on the protective portion of the liner and exposed materials of the stack structures. At least one of the protective portion and the conformal portion does not comprise aluminum. Additional methods of forming a semiconductor structure are disclosed, as are semiconductor structures including the liners comprising the protective portion and the conformal portion.

Claims24

Dependent claims

A semiconductor structure, comprising:

stack structures comprising electrode materials and chalcogenide materials on a substrate;
and
a liner comprising a protective portion and a conformal portion on at least a portion of the stack structures, the liner exhibiting an interfacial fracture energy of greater than or equal to about 3 J/m2 between the protective portion of the liner and the stack structures.

Dependencies are inferred from the claim text.

Facts

Application

15/857,873Filed 29 Dec 2017

Priority

3 Apr 2014

Published

3 May 2018

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10N 70/826
Device geometry: adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
H10B 63/24
Comprising selection components having two electrodes, e.g. diodes: of the Ovonic threshold switching type
H10N 70/063
Shaping switching materials: by etching of pre-deposited switching material layers, e.g. lithography
H10N 70/231
Multistable switching devices, e.g. memristors: based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect

Semiconductor structures including multi-portion liners

Life of this patent

Semiconductor structures including multi-portion liners

Life of this patent

Abstract

Claims24