Back to results
US 2018/0123034 A1Published application
Multivalent oxide cap for analog switching resistive memory
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Marwan H. Khater, Seyoung Kim, Hiroyuki Miyazoe
Life of this patent
Estimating the term…
Abstract
A resistive random access memory (RRAM), including a first electrode, a base oxide being connected to the first electrode, and a multivalent oxide being connected to the base oxide layer. The multivalent oxide switches oxidative states.
Claims20
A resistive random access memory (RRAM), comprising:
- a first electrode;
- a base oxide being connected to the first electrode;
- and
- a multivalent oxide being connected to the base oxide layer,
- wherein the multivalent oxide switches oxidative states.
2 more elements
A resistive semiconductor device, comprising:
- a first electrode;
- a base oxide connected to the first electrode;
- and
- a multivalent oxide formed one the first electrode,
- wherein the multivalent oxide switches oxidative states.
2 more elements
A method of forming a resistive random access memory (RRAM), the method comprising:
- forming a first electrode on a base oxide;
- and
- forming a multivalent oxide connected to the base oxide,
- wherein the multivalent oxide switches oxidative states.
1 more element
Dependencies are inferred from the claim text.