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US 2018/0123033 A1Published application
Multivalent oxide cap for analog switching resistive memory
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Marwan H. Khater, Seyoung Kim, Hiroyuki Miyazoe
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Abstract
A resistive random access memory (RRAM), includes a base oxide, and a multivalent oxide provided on the base oxide. The multivalent oxide switches between at least two oxidative states.
Claims20
A resistive random access memory (RRAM), comprising:
- a base oxide;
- and
- a multivalent oxide provided on the base oxide,
- wherein the multivalent oxide switches between at least two oxidative states.
1 more element
A resistive semiconductor device, comprising:
- a base oxide;
- and
- a multivalent oxide formed on the base oxide,
- wherein the multivalent oxide switches between at least two oxidative states.
1 more element
A method of forming a resistive random access memory (RRAM), the method comprising:
- forming a base oxide;
- and
- forming a multivalent oxide on the base oxide,
- wherein the multivalent oxide switches between at least two oxidative states.
1 more element
Dependencies are inferred from the claim text.