Magnetic random access memory device having magnetic tunnel junction
AssigneeImec Vzw
InventorsHanns Christoph Adelmann, Gouri Sankar Kar, Johan Swerts, Sebastien Couet
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Abstract
The disclosed technology generally relates to semiconductor devices and more particularly to semiconductor devices comprising a magnetic tunnel junction (MTJ). In an aspect, a method of forming a magnetoresistive random access memory (MRAM) includes forming a layer stack above a substrate, where the layer stack includes a ferromagnetic reference layer, a tunnel barrier layer and a ferromagnetic free layer and a spin-orbit-torque (SOT)-generating layer. The method additionally includes, subsequent to forming the layer stack, patterning the layer stack to form a MTJ pillar.
Claims19
A method of forming a magnetoresistive random access memory (MRAM) device, the method comprising:
- providing a substrate;
- forming a layer stack above the substrate, the layer stack including in a bottom-up direction a ferromagnetic reference layer, a tunnel barrier layer, a ferromagnetic free layer and a spin-orbit-torque (SOT)-generating layer configured to exert a spin torque on the ferromagnetic free layer when current flows therethrough;
- and
- subsequent to forming the layer stack, patterning the layer stack to form a magnetic tunnel junction (MTJ) pillar.
A magnetoresistive random access memory (MRAM) device, comprising:
- a substrate;
- a magnetic tunnel junction (MTJ) pillar formed above the substrate, the MTJ pillar including in a bottom-up direction a ferromagnetic reference layer, a tunnel barrier layer, a ferromagnetic free layer and a spin-orbit-torque (SOT)-generating layer configured to exert a spin torque on the ferromagnetic free layer when current flows therethrough.
Dependencies are inferred from the claim text.