Data storage devices and methods for manufacturing the same

A method for manufacturing a data storage device, the method comprising:

• forming an interlayer insulating layer on a substrate;
• forming a magnetic tunnel junction layer on the substrate;
• irradiating a first ion beam on the magnetic tunnel junction layer to form a plurality of magnetic tunnel junction patterns based on etching the magnetic tunnel junction layer, the plurality of magnetic tunnel junction patterns separated from each other;
• irradiating a second ion beam on the magnetic tunnel junction layer to remove etch residues from sidewalls of the magnetic tunnel junction patterns;
• and
• irradiating a third ion beam on the magnetic tunnel junction layer to form sidewall insulating patterns on sidewalls of the magnetic tunnel junction patterns based on re-depositing materials separated from the interlayer insulating layer by the third ion beam on the sidewalls of the magnetic tunnel junction patterns.

A method for manufacturing a data storage device, the method comprising:

• forming an interlayer insulating layer on a substrate;
• forming a magnetic tunnel junction layer on the substrate;
• irradiating a first ion beam on the magnetic tunnel junction layer to form a plurality of magnetic tunnel junction patterns based on etching the magnetic tunnel junction layer, the plurality of magnetic tunnel junction patterns separated from each other;
• and
• irradiating a second ion beam on the magnetic tunnel junction layer to form sidewall insulating patterns on sidewalls of the magnetic tunnel junction patterns based on re-depositing materials separated from the interlayer insulating layer by the second ion beam on the sidewalls of the magnetic tunnel junction patterns.