High Energy Barrier Perpendicular Magnetic Tunnel Junction Element With Reduced Temperature Sensitivity

A method of forming a device comprising:

• providing a substrate comprising circuit component formed on a substrate surface;
• performing back-end-of-line (BEOL) processing to form a BEOL dielectric layer over the substrate, wherein the BEOL dielectric layer comprises a plurality of interlevel dielectric (ILD) levels;
• and
• forming a perpendicular magnetic tunnel junction (pMTJ) stack between adjacent ILD levels of the BEOL dielectric layer, the pMTJ stack is disposed between top and bottom electrodes, and wherein forming the pMTJ stack comprises
• sequentially forming various layers of the pMTJ on the bottom electrode, wherein the various layers include,
• a magnetic fixed layer,
• a first tunnelling barrier layer, and
• a magnetic free layer, wherein the first tunnelling barrier layer is disposed between the magnetic fixed layer and the magnetic free layer, the magnetic free layer comprises an as-deposited crystalline magnetic free layer, the as-deposited crystalline magnetic fee layer reduces temperature sensitivity of the pMTJ stack.