Eutectic Electrode Structure of Flip-chip LED Chip and Flip-chip LED Chip

A flip-chip LED chip, comprising:

• a substrate;
• a first semiconductor layer over the substrate;
• a light emitting layer over the first semiconductor layer;
• a second semiconductor layer over the light emitting layer;
• a local defect region over part of the second semiconductor layer, which extends downward to the first semiconductor layer;
• a first metal layer over part of the first semiconductor layer;
• a second metal layer over part of the second semiconductor layer;
• an insulating layer covering the first metal layer, the second metal layer, the second semiconductor layer and the first semiconductor layer in the local defect region, wherein, the insulating layer has opening structures over the first metal layer and the second metal layer respectively;
• an eutectic electrode structure over the insulating layer with openings, wherein the eutectic electrode structure comprises a first eutectic layer and a second eutectic layer from bottom to up at vertical direction, and is divided into a first-type electrode region and a second-type electrode region at horizontal direction;
• wherein an upper surface and a lower surface of the first eutectic layer are not flat, and an upper surface and a lower surface of the second eutectic layer are flat.

A light-emitting system comprising a plurality of flip-chip LED chips each including:

• a substrate;
• a first semiconductor layer over the substrate;
• a light emitting layer over the first semiconductor layer;
• a second semiconductor layer over the light emitting layer;
• a local defect region over part of the second semiconductor layer, which extends downward to the first semiconductor layer;
• a first metal layer over part of the first semiconductor layer;
• a second metal layer over part of the second semiconductor layer;
• an insulating layer covering the first metal layer, the second metal layer, the second semiconductor layer and the first semiconductor layer in the local defect region, wherein, the insulating layer has opening structures over the first metal layer and the second metal layer respectively;
• an eutectic electrode structure over the insulating layer with openings, wherein, the eutectic electrode structure is composed of first eutectic layers and second eutectic layers from bottom to up at vertical direction, and is divided into a first-type electrode region and a second-type electrode region at horizontal direction;
• wherein upper surfaces and lower surfaces of the first eutectic layers are not flat, and upper surfaces and lower surfaces of the second eutectic layers are flat.