Light Emitting Diode and Fabrication Method Thereof

A fabrication method of a light-emitting diode, comprising:

• 1) providing a light-emitting epitaxial laminated layer having an upper surface and a lower surface opposite to each other, which further comprises a first semiconductor layer, a second semiconductor layer and an active layer between them;
• 2) fabricating a dielectric layer having a conductive through-hole array over the lower surface of the light-emitting epitaxial laminated layer;
• 3) fabricating a metal conductive layer over the surface of the dielectric layer, which fills up the conductive through-hole, and forms ohmic contact with the light-emitting epitaxial laminated layer;
• 4) providing a conductive substrate and connecting it to the metal conductive layer for supporting the light-emitting epitaxial laminated layer;
• and
• 5) forming a first electrode comprising a bonding pad electrode and a finger-shape electrode over the upper surface of the light-emitting epitaxial laminated layer, wherein, a rotation angle is formed between the finger-shape electrode and the conductive through-hole array formed in step 2), which is selected to prevent a preferred number of conductive through-holes from being shielded by the bonding pad electrode and the finger-shape electrode.

A light-emitting system comprising a plurality of light-emitting diodes, each light-emitting diode including:

• a light-emitting epitaxial laminated layer having an upper surface and a lower surface opposite to each other, further comprising:
• a first semiconductor layer, a second semiconductor layer and an active layer between them;
• a dielectric layer having a conductive through-hole array over the lower surface of the light-emitting epitaxial laminated layer;
• a metal conductive layer over the lower surface of the dielectric layer, which fills up the conductive through-hole, and forms ohmic-contact with the light-emitting epitaxial laminated layer;
• a conductive substrate over the lower surface of the metal conductive layer for supporting the light-emitting epitaxial laminated layer;
• a first electrode comprising a bonding pad electrode and a finger-shape electrode over the upper surface of the light-emitting epitaxial laminated layer.
• wherein, a rotation angle is formed between the conductive through-hole array and the finger-shape electrode, which is selected to prevent a preferred number of conductive through-holes from being shielded by the bonding pad electrode and the finger-shape electrode.