Methods for growing light emitting devices under ultra-violet illumination

A method for forming a light emitting diode (LED) in a deposition chamber, the method comprising:

• epitaxially growing a III-nitride n-type layer over a growth substrate;
• epitaxially growing an active layer over the III-nitride n-type layer;
• epitaxially growing a III-nitride p-type layer over the active layer in the presence of hydrogen and magnesium;
• annealing at least the III-nitride p-type layer in-situ to activate magnesium dopants in the p-type layer;
• ceasing the anneal;
• epitaxially forming a first portion of a III-nitride tunnel junction n-type layer over the III-nitride p-type layer to form a tunnel junction light emitting diode;
• illuminating a surface of the first portion of the III-nitride tunnel junction n-type layer with light having a photon energy higher than the III-nitride p-type layer's band gap energy during growth;
• and
• epitaxially forming a remainder of the III-nitride tunnel junction n-type layer absent light illumination during growth.

A method for forming a light emitting diode (LED) in a deposition chamber, the method comprising:

• epitaxially growing at least one III-nitride p-type layer over a growth substrate absent light illumination during growth;
• epitaxially growing a non p-type layer over the at least one III-nitride p-type layer;
• and
• illuminating a surface of the non p-type layer with light having a photon energy higher than the III-nitride p-type layer's band gap energy during non p-type layer growth to inhibit formation of Mg—H complexes within the III-nitride p-type layer resulting from hydrogen present in the deposition chamber.