Light Emitting Diode and Fabrication Method Thereof

A fabrication method of a light-emitting diode, comprising:

• (1) growing a first conductive type semiconductor layer;
• (2) growing a super lattice over the first conductive type semiconductor layer;
• (3) growing a multi-quantum well layer with V pits over the super lattice;
• (4) growing a hole injection layer in the V pits, which fills up and is higher than the V pits, until a hole injection layer of dual hexagonal pyramid shape is formed;
• (5) growing a second conductive type semiconductor layer over the top surface of the multi-quantum well layer and the hole injection layer.

A light-emitting system comprising a plurality of light-emitting diodes, wherein each light-emitting diode comprises, from bottom to up:

• a first conductive type semiconductor layer;
• a super lattice;
• a multi-quantum well layer with V pits;
• a hole injection layer;
• and
• a second-conductive type semiconductor layer;
• wherein the hole injection layer appears in a dual hexagonal pyramid shape, which fills up the V pits and embeds in the second conductive type semiconductor layer.