Light-emitting diode and method of fabricating the same
AssigneeUniversity-Industry Foundation (Uif), Yonsei University
InventorsJae-Min Myoung, Sung-Doo Back
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Abstract
Provided are a light-emitting diode and a method of fabricating the same. The light-emitting diode includes a first electrode; a P-type zinc oxide layer which is formed on the first electrode and comprises nano-discs doped with an impurity or nano-rods of zinc oxide doped with an impurity; an N-type zinc oxide layer, which is formed on the P-type zinc oxide layer, comprises nano-rods, and the nano-rods of the N-type zinc oxide layer constitutes homojunction having an epitaxial interface with the P-type zinc oxide layer; and a second electrode, which is formed on the N-type zinc oxide layer.
Claims20
A light-emitting diode comprising:
- a first electrode;
- a P-type zinc oxide layer, which is formed on the first electrode, comprises nano-discs doped with an impurity or nano-rods of zinc oxide doped with an impurity;
- an N-type zinc oxide layer, which is formed on the P-type zinc oxide layer, comprises nano-rods, and the nano-rods of the N-type zinc oxide layer constitutes homojunction having an epitaxial interface with the P-type zinc oxide layer;
- and
- a second electrode formed on the N-type zinc oxide layer.
A method of fabricating a light-emitting diode comprising:
- forming a first electrode on a substrate;
- forming a first conductivity type zinc oxide layer on the first electrode;
- forming a second conductivity type zinc oxide layer comprising nano-rods of zinc oxide on the first conductivity type zinc oxide layer in order to form homojunction having an epitaxial interface with the first conductivity type zinc oxide layer;
- and
- forming a second electrode on the second zinc oxide layer.
Dependencies are inferred from the claim text.