Light Emitting Diode Chip and Fabrication Method
AssigneeXiamen Sanan Optoelectronics Technology Co., Ltd.
InventorsShu-fan YANG, Chun-Yi WU, Chaoyu WU, Duxiang WANG
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Abstract
A light-emitting diode chip includes an electrical connection layer is arranged over the light-emitting surface of the light-emitting epitaxial laminated layer, which is not connected with isolation of the dielectric layer. After CMP treatment, the flat surface is plated with a transparent current spreading layer, which reduces horizontal conduction resistance of the transparent current spreading layer and replaces the metal spreading finger for horizontal conduction.
Claims20
A light-emitting diode chip, comprising:
- a light-emitting epitaxial laminated layer including a first-type semiconductor layer, a second-type semiconductor layer and an active layer between them, which has two surfaces opposite to each other, wherein, the second surface is the light-emitting surface;
- a first electrical connection layer over the first surface of the light-emitting epitaxial laminated layer, which is composed of first geometric pattern arrays;
- a second electrical connection layer over the second surface of the light-emitting epitaxial laminated layer, which is composed of second geometric pattern arrays;
- and
- a transparent current spreading layer over the surface of the second electrical connection layer;
- wherein, when external power is connected, the horizontal resistance of current passing through the transparent current spreading layer is less than that passing through the second electrical connection layer.
A fabrication method of a light-emitting diode chip, comprising:
- 1) providing a light-emitting epitaxial laminated layer, comprising a first-type semiconductor layer, a second-type semiconductor layer and an active layer between them, which has two surfaces opposite to each other, wherein, the second surface is the light-emitting surface;
- 2) fabricating a first electrical connection layer over the first surface of the light-emitting epitaxial laminated layer, which is composed of first geometric pattern arrays;
- 3) fabricating a second electrical connection layer over the second surface of the light-emitting epitaxial laminated layer, which is composed of second geometric pattern arrays;
- 4) fabricating a transparent current spreading layer over the surface of the second electrical connection layer;
- when external power is connected, the horizontal resistance of current passing through the transparent current spreading layer is less than that passing through the first electrical connection layer.
A light-emitting system comprising a plurality of light-emitting diodes, each light-emitting diode including:
- a light-emitting epitaxial laminated layer comprising a first-type semiconductor layer, a second-type semiconductor layer and an active layer between them, which has two surfaces opposite to each other, wherein, the second surface is the light-emitting surface;
- a first electrical connection layer over the first surface of the light-emitting epitaxial laminated layer, which is composed of first geometric pattern arrays;
- a second electrical connection layer over the second surface of the light-emitting epitaxial laminated layer, which is composed of second geometric pattern arrays;
- and
- a transparent current spreading layer over the surface of the second electrical connection layer;
- wherein, when external power is connected, the horizontal resistance of current passing through the transparent current spreading layer is less than that passing through the second electrical connection layer.
Dependencies are inferred from the claim text.