US 2018/0122971 A1 · SEMICONDUCTOR STACK, LIGHT-RECEIVING DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR STACK

Abstract

A semiconductor stack includes a first-conductivity-type layer of a first conductivity type, the first-conductivity-type layer being formed of a III-V compound semiconductor; a quantum well light-receiving layer formed of a III-V compound semiconductor; and a second-conductivity-type layer of a second conductivity type different from the first conductivity type, the second-conductivity-type layer being formed of a III-V compound semiconductor. The first-conductivity-type layer, the quantum well light-receiving layer, and the second-conductivity-type layer are stacked in this order. The quantum well light-receiving layer has a thickness of 0.5 μm or more. The quantum well light-receiving layer has a carrier concentration of 1×1016 cm−3 or less.

Claims18

Dependent claims

A semiconductor stack comprising:

a first-conductivity-type layer of a first conductivity type, the first-conductivity-type layer being formed of a III-V compound semiconductor;
a quantum well light-receiving layer formed of a III-V compound semiconductor;
and
a second-conductivity-type layer of a second conductivity type different from the first conductivity type, the second-conductivity-type layer being formed of a III-V compound semiconductor,
wherein the first-conductivity-type layer, the quantum well light-receiving layer, and the second-conductivity-type layer are stacked in this order,
the quantum well light-receiving layer has a thickness of 0.5 μm or more, and
the quantum well light-receiving layer has a carrier concentration of 1×1015 cm−3 or less.

4 more elements

A method for producing a semiconductor stack, comprising:

a step of forming a first-conductivity-type layer of a first conductivity type, the first-conductivity-type layer being formed of a III-V compound semiconductor;
a step of forming a quantum well light-receiving layer formed of a III-V compound semiconductor;
and
a step of forming a second-conductivity-type layer of a second conductivity type different from the first conductivity type, the second-conductivity-type layer being formed of a III-V compound semiconductor,
wherein the step of forming a first-conductivity-type layer, the step of forming a quantum well light-receiving layer, and the step of forming a second-conductivity-type layer are performed in this order, and the first-conductivity-type layer, the quantum well light-receiving layer, and the second-conductivity-type layer are stacked in this order, and
the quantum well light-receiving layer is formed so as to have a thickness of 0.5 μm or more and a carrier concentration of 1×1016 cm −3 or less.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/566,672Filed 8 Apr 2016

Priority

JP 2015-08785022 Apr 2015

Published

3 May 2018

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10F 77/146
Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies: superlattices;…
H10F 30/222
The devices having only one potential barrier, e.g. photodiodes: the potential barrier being a PN heterojunction
H10F 39/1847
Infrared image sensors: multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
H10F 71/1272
The active layers comprising only Group III-V materials, e.g. GaAs or InP: comprising at least three elements, e.g. GaAlAs or InGaAsP

Semiconductor stack, light-receiving device, and method for producing semiconductor stack

Life of this patent

Semiconductor stack, light-receiving device, and method for producing semiconductor stack

Life of this patent

Abstract

Claims18