Light detection device
AssigneeSeoul Viosys Co., Ltd.
InventorsKi Yon Park, Gun Woo Han, Choong Min Lee, Soo Hyun Lee
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Abstract
Disclosed herein is a light detection device. The light detection device includes a base layer, an electrostatic discharge (ESD) prevention layer disposed on the base layer and including an undoped nitride-based semiconductor, a light absorption layer disposed on the ESD prevention layer, a Schottky junction layer disposed on the light absorption layer, and a first electrode and a second electrode electrically connected to the Schottky junction layer and the base layer, respectively, wherein the ESD prevention layer has a lower average n-type dopant concentration than the base layer.
Claims36
A light detection device comprising:
- a base layer;
- an electrostatic discharge (ESD) prevention layer disposed on the base layer and including an undoped nitride-based semiconductor material;
- a light absorption layer disposed on the ESD prevention layer;
- a Schottky junction layer disposed on the light absorption layer;
- and
- a first electrode and a second electrode electrically connected to the base layer and the Schottky junction layer, respectively,
- wherein the ESD prevention layer has a lower average n-type dopant concentration than the base layer.
A light detection device comprising:
- a base layer including a nitride-based semiconductor material;
- an ESD prevention layer disposed on the base layer;
- a light absorption layer disposed on the ESD prevention layer and including an Al-containing nitride-based semiconductor layer;
- and
- a Schottky junction layer disposed on the light absorption layer,
- wherein the ESD prevention layer includes:
- a first nitride layer disposed on the base layer and including a nitride-based semiconductor material having an Al composition ratio of 0.9 or more;
- and
- a second nitride layer disposed on the first nitride layer and including a nitride-based semiconductor material having a lower Al composition ratio than the first nitride layer,
- wherein the first nitride layer includes a pit formed on an upper portion thereof, and the second nitride layer fills the pit.
A light detection device comprising:
- a base layer including a nitride-based semiconductor material;
- an ESD prevention layer disposed on the base layer;
- a light absorption layer disposed on the second nitride layer and including an Al-containing nitride-based semiconductor layer;
- and
- a Schottky junction layer disposed on the light absorption layer,
- wherein the ESD prevention layer includes:
- a first nitride layer disposed on the base layer and including a nitride-based semiconductor material having an Al composition ratio of 0.9 or more;
- and
- a second nitride layer disposed on the first nitride layer and including a nitride-based semiconductor material having a lower Al composition ratio than the first nitride layer, and
- wherein the first nitride layer includes a pit formed on an upper portion thereof, and the first nitride layer has a higher defect density than the second nitride layer.
A method of fabricating a light detection device, comprising:
- forming a base layer including a nitride-based semiconductor material on a substrate;
- forming a first nitride layer on the base layer to include a nitride-based semiconductor material having an Al composition ratio of 0.9 or more, the first nitride layer including a pit;
- forming a second nitride layer on the first nitride layer to include a nitride-based semiconductor material having a lower Al composition ratio than the first nitride layer;
- forming a light absorption layer on the second nitride layer to include an Al-containing nitride-based semiconductor material;
- and
- forming a Schottky junction layer on the light absorption layer.
Dependencies are inferred from the claim text.