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US 2018/0122959 A1Published application
Deposition of charge trapping layers
AssigneeASM IP Holding B.V.
InventorsPauline Calka, Qi Xie, Dieter Pierreux, Bert Jongbloed
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Abstract
A semiconductor device and method for manufacturing the semiconductor device are disclosed. Specifically, the semiconductor device may include a charge trapping layer with improved retention and speed for VNAND applications. The charge trapping layer may comprise an aluminum nitride (AlN) or aluminum oxynitride (AlON) layer.
Claims20
A method of forming an aluminum nitride or aluminum oxynitride layer for a NAND device, the method comprising:
- providing a substrate in a reaction chamber;
- exposing the substrate to a nitrogen precursor;
- and
- exposing the substrate to an aluminum precursor;
- wherein a reaction between the nitrogen precursor and the aluminum precursor forms an aluminum nitride or aluminum oxynitride layer for a NAND device.
2 more elements
Dependencies are inferred from the claim text.