Laminate structure of thin film transistor

A laminate structure of a thin film transistor, comprising:

• a thin film transistor array, the thin film transistor array comprising:
• a gate;
• a channel layer, formed on the gate;
• a gate insulating layer, formed between the gate and the channel layer;
• and
• a source and a drain, respectively Ruined on both sides of the channel layer;
• and
• a passivation layer, formed on the thin film transistor array, and the passivation layer has at least one contact hole exposing the source or the drain, wherein the passivation layer is an oxazole-containing photosensitive polyimide (PSPI) resin, and the oxazole-containing photosensitive polyimide resin is a copolymer comprising a unit represented by formula (1), a unit represented by formula (2) and a unit represented by formula (3):
• in formula (1) to formula (3), Ar1 is selected from the group consisting of formula (4) to formula (11):
• wherein X is —O—, —C—, —C(CF3)2—, —C(CH3)2—, —CO—, or —SO2—;
• Ar2 is selected from the group consisting of formula (12) to formula (14):
• wherein Y is —O—, —CH2—, —C(CF3)—, —C(CH3)2—, —CO—, —SO2—, —S—,
• R is OH, COOH, or COOR*, R* represents
• Ar3 is selected from the group consisting of formula (15):
• wherein m represents an integer of 1 to 20.