Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei YAMAZAKI
Life of this patent
Estimating the term…
Abstract
An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device includes an insulating film; a first metal oxide film on and in contact with the insulating film; an oxide semiconductor film partly in contact with the first metal oxide film; source and drain electrodes electrically connected to the oxide semiconductor film; a second metal oxide film partly in contact with the oxide semiconductor film; a gate insulating film on and in contact with the second metal oxide film; and a gate electrode over the gate insulating film.
Claims13
(canceled)
A semiconductor device comprising:
- a first metal oxide film over a substrate, the first metal oxide film comprising gallium;
- an oxide semiconductor film in contact with the first metal oxide film;
- source and drain electrodes in contact with the oxide semiconductor film;
- a second metal oxide film in contact with the oxide semiconductor film, the second metal oxide film comprising gallium;
- and
- a gate electrode over the second metal oxide film,
- wherein an energy at a bottom of a conduction band of each of the first metal oxide film and the second metal oxide film is higher than an energy at a bottom of a conduction band of the oxide semiconductor film, and
- wherein the second metal oxide film is in contact with a top surface of each of the source and drain electrodes.
A semiconductor device comprising:
- a first metal oxide film over a substrate, the first metal oxide film comprising gallium;
- an oxide semiconductor film in contact with the first metal oxide film;
- source and drain electrodes in contact with the oxide semiconductor film;
- a second metal oxide film in contact with the oxide semiconductor film, the second metal oxide film comprising gallium;
- a gate insulating film over the second metal oxide film;
- and
- a gate electrode over the gate insulating film,
- wherein an energy at a bottom of a conduction band of each of the first metal oxide film and the second metal oxide film is higher than an energy at a bottom of a conduction band of the oxide semiconductor film, and
- wherein the second metal oxide film is in contact with a top surface of each of the source and drain electrodes.
Dependencies are inferred from the claim text.