Bottom-gate transistor formed in surface recess
AssigneeEastman Kodak Company
InventorsShelby Forrester Nelson, Carolyn Rae Ellinger
Life of this patent
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Abstract
A bottom-gate transistor has a channel in a recess of a substrate surface. A gate electrode is disposed in and in contact with the recess. A dielectric material layer contacts the gate electrode in the recess. A semiconductor material contacts the dielectric material in the recess and extends over the top surface of the substrate outside of the recess. A source electrode and a drain electrode contact the semiconductor material on opposite sides of the narrow dimension of the recess such that at least a portion of the channel of the transistor is in the recess.
Claims13
A bottom-gate transistor having a channel in a surface recess, comprising:
- a substrate surface having a recess, the recess having a narrow dimension;
- a gate electrode disposed in and in contact with the recess;
- a dielectric material in contact with the gate electrode in the recess;
- a semiconductor material in contact with the dielectric material in the recess and extending over the top surface of the substrate outside of the recess;
- and
- a source electrode and a drain electrode in contact with the semiconductor material on opposite sides of the narrow dimension of the recess over the top surface of the substrate outside of the recess such that at least a portion of the channel of the transistor is in the recess.
Dependencies are inferred from the claim text.