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US 2018/0122947 A1Published application
Semiconductor device and method of forming the semiconductor device
AssigneeInternational Business Machines Corporation
InventorsMarc Adam Bergendahl, Gauri Karve, Fee Li Lie, Eric R. Miller, Robert Russell Robison, John Ryan Sporre, Sean Teehan
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Abstract
A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.
Claims20
A semiconductor device comprising:
- a fin structure comprising a cylindrical shape and including a recess formed in an upper surface of the fin structure;
- an inner gate formed inside the fin structure;
- an outer gate formed outside the fin structure;
- and
- a conductor formed in the recess and connecting the inner and outer gates.
2 more elements
A semiconductor device comprising:
- a fin structure comprising a cylindrical shape;
- an inner gate formed inside the fin structure;
- and
- an outer gate formed outside the fin structure and connected to the inner gate.
1 more element
A semiconductor device comprising:
- a fin structure comprising a circular cylindrical shape, and including:
- a first recess formed on a first side of the fin structure;
- and
- a second recess formed on a second side of the fin structure opposite the first side;
- an inner gate formed inside the fin structure, and an inner gate insulating layer formed between the inner gate and an inner surface of the fin structure;
- an outer gate formed outside the fin structure, and an outer gate insulating layer formed between the outer gate and an outer surface of the fin structure;
- and
- first and second conductive bars formed in the first and second recesses, respectively, each of the first and second conductive bars connecting the inner and outer gates, a height of the first and second conductive bars being substantially equal to the depth of the recess, such that an upper surface of the first and second conductive bars is substantially co-planar with an upper surface of the fin structure, and each of the first and second conductive bars comprising a first end connected to an outer surface of the inner gate and a second end connected to an inner surface of the outer gate.
5 more elements
Dependencies are inferred from the claim text.