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US 2018/0122946 A1Published application
Semiconductor Devices and FinFETS
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorMartin Christopher Holland
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Abstract
Semiconductor devices and fin field effect transistors (FinFETs) are disclosed. In some embodiments, a representative semiconductor device includes a group III material over a substrate, the group III material comprising a thickness of about 2 monolayers or less, and a group III-V material over the group III material.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- recessing a substrate material between a first isolation region and a second isolation region to form an opening;
- annealing the substrate material after the recessing the substrate material;
- growing 2 monolayers or less of a group III material on the substrate material after the annealing the substrate material;
- nucleating a III-V material from the group III material, the group III material being grown within the opening;
- growing a channel material from the III-V material and within the opening;
- planarizing the channel material with the first isolation region and the second isolation region;
- and
- recessing the first isolation region and the second isolation region to expose at least a portion of the III-V material.
5 more elements
A method of manufacturing a semiconductor device, the method comprising:
- planarizing a semiconductor material with an isolation region;
- removing a portion of the semiconductor material after the planarizing the semiconductor material while leaving a remainder of the semiconductor material;
- annealing the remainder of the semiconductor material;
- introducing at least one precursor to the remainder of the semiconductor material after the annealing the remainder of the semiconductor material, wherein the introducing the at least one precursor forms no more than 2 monolayers of a group III material;
- using the group III material as a seed layer to grow a III-V material below a top surface of the isolation region;
- using the III-V material to grow a channel material;
- planarizing the channel material with the isolation region;
- and
- exposing a sidewall of the channel material after the planarizing the channel material.
6 more elements
A method of manufacturing a semiconductor device, the method comprising:
- annealing a first surface which comprises a semiconductor material and an isolation material, wherein the first surface has a step change in height with respect to a semiconductor substrate;
- growing a group III material onto the semiconductor material;
- growing a III-V material onto the group III material, wherein during the growing the III-V material the group III material has a thickness of less than two monolayers;
- growing a channel material onto the III-V material;
- reducing the channel material to be planar with the isolation material;
- and
- recessing the isolation material after the reducing the channel material.
4 more elements
Dependencies are inferred from the claim text.