Semiconductor device and method for producing semiconductor device

A method for producing a semiconductor device, the method comprising:

• forming a first metal on a planar semiconductor layer formed on a substrate;
• forming a first insulating film on the first metal;
• forming, on the first insulating film, a gate material formed of metal;
• forming a second insulating film on the gate material;
• forming a second metal on the second insulating film;
• forming a third insulating film on the second metal;
• forming a first hole for forming a pillar-shaped semiconductor layer, in the third insulating film, the second metal, the second insulating film, the gate material formed of metal, the first insulating film, and the first metal;
• forming a gate insulating film on a side surface of the first hole;
• and
• epitaxially growing a semiconductor layer, within the first hole, on the planar semiconductor layer to form the pillar-shaped semiconductor layer.