Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang
Life of this patent
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Abstract
A method of fabricating a vertical fin field effect transistor with a merged top source/drain, including, forming a source/drain layer at the surface of a substrate, forming a plurality of vertical fins on the source/drain layer; forming protective spacers on each of the plurality of vertical fins, forming a sacrificial plug between two protective spacers, forming a filler layer on the protective spacers not in contact with the sacrificial plug, and selectively removing the sacrificial plug to form an isolation region trench between the two protective spacers.
Claims20
An adjoined pair of vertical fin devices, comprising:
- a first bottom source/drain and a second bottom source/drain on a substrate, wherein the first bottom source/drain is separated from the second bottom source/drain by a shallow trench isolation region in the substrate;
- at least four vertical fins, wherein at least two of the at least four vertical fins are on the first bottom source/drain and at least two of the at least four vertical fins are on the second bottom source/drain;
- and
- a merged source/drain on one vertical fin on the first bottom source/drain and one adjacent vertical fin on the second bottom source/drain that bridges the shallow trench isolation region to electrically couple the adjacent vertical fins.
An adjoined pair of vertical fin devices, comprising:
- a first bottom source/drain and a second bottom source/drain on a substrate, wherein the first bottom source/drain is separated from the second bottom source/drain by a shallow trench isolation region in the substrate;
- at least four vertical fins, wherein at least two of the at least four vertical fins are on the first bottom source/drain and at least two of the at least four vertical fins are on the second bottom source/drain;
- a gate structure on each of the at least four vertical fins;
- a top source/drain on at least one of the at least two vertical fins on the first bottom source/drain;
- a top source/drain on at least one of the at least two vertical fins on the second bottom source/drain;
- and
- a merged source/drain on one vertical fin on the first bottom source/drain and one adjacent vertical fin on the second bottom source/drain that bridges the shallow trench isolation region to electrically couple the adjacent vertical fins.
An adjoined pair of vertical fin devices, comprising:
- a first bottom source/drain and a second bottom source/drain on a substrate, wherein the first bottom source/drain is separated from the second bottom source/drain by a shallow trench isolation region in the substrate;
- at least four vertical fins, wherein at least two of the at least four vertical fins are on the first bottom source/drain and at least two of the at least four vertical fins are on the second bottom source/drain;
- a gate structure on each of the at least four vertical fins;
- a top source/drain on at least one of the at least two vertical fins on the first bottom source/drain;
- a top source/drain on at least one of the at least two vertical fins on the second bottom source/drain;
- a merged source/drain on one vertical fin on the first bottom source/drain and one adjacent vertical fin on the second bottom source/drain that bridges the shallow trench isolation region to electrically couple the adjacent vertical fins;
- and
- an electrical contact on the top source/drain on the at least one of the at least two vertical fins on the first bottom source/drain and on the top source/drain on the at least one of the at least two vertical fins on the second bottom source/drain.
Dependencies are inferred from the claim text.