Methods of Manufacturing a Semiconductor Device with a Buried Doped Region and a Contact Structure

A method of manufacturing a semiconductor device, the method comprising:

• forming a buried doped region at a first distance from a main surface plane in a semiconductor body;
• forming a contact structure extending from the main surface plane to the doped region, wherein the contact structure comprises a contact layer directly adjoining the doped, region and a fill structure, wherein the contact layer is formed from a metal semiconductor alloy and the fill structure comprises a metal or a conductive metal compound;
• and
• forming an insulator structure surrounding the contact structure in planes parallel to the main surface plane, wherein the insulator structure laterally directly adjoins the contact structure, wherein the insulator structure vertically extends deeper into the semiconductor body than the contact structure, the depth of the insulator structure and the contact structure being measured from the main surface.

A method of manufacturing a semiconductor device, the method comprising:

• forming a semiconductor fin in a semiconductor body at a distance to a main surface plane of the semiconductor body, the semiconductor fin comprising a channel region;
• forming a first semiconductor column spaced from, the main surface plane and directly adjoining the semiconductor fin, the first semiconductor column comprising a source region that forms a first homojunction with the channel region;
• forming a contact structure extending from the main surface plane to the first semiconductor column, wherein the contact structure comprises a contact layer formed from a metal semiconductor alloy directly adjoining the first semiconductor column and a fill structure comprising a metal or a conductive metal compound;
• and
• forming an insulator structure laterally directly adjoining the contact structure.