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US 2018/0122934 A1Published application
Semiconductor Device Having a Trench Gate
AssigneeInfineon Technologies Austria AG
InventorsDavid Laforet, Cedric Ouvrard
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Abstract
A semiconductor device includes a gate structure extending from a first surface into a semiconductor portion and having a metal gate electrode and a gate dielectric separating the metal gate electrode from the semiconductor portion. An interlayer dielectric separates a first load electrode from the semiconductor portion, and includes a screen oxide layer thinner than the gate dielectric. A body zone and a source zone are formed in the semiconductor portion and directly adjoin the gate structure.
Claims20
A semiconductor device, comprising:
- a gate structure extending from a first surface into a semiconductor portion and comprising a metal gate electrode and a gate dielectric separating the metal gate electrode from the semiconductor portion;
- an interlayer dielectric separating a first load electrode from the semiconductor portion, the interlayer dielectric comprising a screen oxide layer thinner than the gate dielectric;
- and
- a body zone and a source zone formed in the semiconductor portion and directly adjoining the gate structure.
1 more element
A semiconductor device, comprising:
- a gate structure extending from a first surface into a semiconductor portion and comprising a metal gate electrode and a gate dielectric separating the gate electrode from the semiconductor portion;
- an interlayer dielectric separating a first load electrode from the first surface, wherein the gate electrode includes a first portion extending from the first surface into the semiconductor portion and a second portion extending from the first surface into the interlayer dielectric;
- and
- a body zone and a source zone formed in the semiconductor portion and directly adjoining the gate structure.
1 more element
Dependencies are inferred from the claim text.