Thin film transistor, manufacturing method thereof, array substrate and display device
AssigneeBoe Technology Group Co., Ltd.
InventorXiaming ZHU
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Abstract
The present disclosure provides a TFT, a manufacturing method thereof, an array substrate and a display device. The TFT includes an N-type metal oxide TFT and a P-type metal oxide TFT. The manufacturing method includes a step of forming an active layer of the N-type metal oxide TFT and an active layer of a P-type metal oxide TFT on a base substrate through a single patterning process.
Claims17
A method for manufacturing a complementary thin film transistor (TFT), the complementary TFT comprising an N-type metal oxide TFT and a P-type meal oxide TFT, wherein the method comprises a step of forming an active layer of the N-type metal oxide TFT and an active layer of the P-type metal oxide TFT on a base substrate through a single patterning process.
A complementary thin film transistor (TFT), comprising an N-type metal oxide TFT and a P-type metal oxide TFT, wherein the complementary TFT further comprises in turn:
- a pattern of a first metal layer comprising a pattern of a first electrode of the N-type metal oxide TFT and a pattern of a second electrode of the P-type metal oxide TFT;
- an active layer of the N-type metal oxide TFT and an active layer of the P-type metal oxide TFT;
- and
- a pattern of a second metal layer comprising a pattern of a third electrode of the N-type metal oxide TFT and a pattern of a fourth electrode of the P-type metal oxide TFT,
- wherein the first electrode and the second electrode are gate electrodes, and the third electrode and the fourth electrode each includes a source electrode and a drain electrode;
- or the third electrode and the fourth electrode are gate electrodes, and the first electrode and the second electrode each includes a source electrode and a drain electrode.
Dependencies are inferred from the claim text.